TY - GEN
T1 - Solidly mounted resonators with layer-transferred AIN using sacrificial crystalline surfaces
AU - Allah, Mohamed Abd
AU - Thalhammer, Robert
AU - Kaitila, Jyrki
AU - Herzog, Thomas
AU - Weber, Werner
AU - Schmitt-Landsiedel, Doris
PY - 2009
Y1 - 2009
N2 - A new process to manufacture solidly mounted bulk acoustic wave resonators using wafer bonding and sacrificial surface removal is introduced. With this process, AIN thin films are obtained having excellent c-axis orientation with XRD rocking curve FWHM of 1.36° and material electromechanical coupling constant of 6.8% exceeding the epitaxial AIN electromechanical coupling constant. The resonators are working around 2.35GHz and have Q-values as high as ∼1300.
AB - A new process to manufacture solidly mounted bulk acoustic wave resonators using wafer bonding and sacrificial surface removal is introduced. With this process, AIN thin films are obtained having excellent c-axis orientation with XRD rocking curve FWHM of 1.36° and material electromechanical coupling constant of 6.8% exceeding the epitaxial AIN electromechanical coupling constant. The resonators are working around 2.35GHz and have Q-values as high as ∼1300.
UR - http://www.scopus.com/inward/record.url?scp=72849144266&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2009.5331616
DO - 10.1109/ESSDERC.2009.5331616
M3 - Conference contribution
AN - SCOPUS:72849144266
SN - 9781424443536
T3 - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
SP - 375
EP - 378
BT - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
T2 - 39th European Solid-State Device Research Conference, ESSDERC 2009
Y2 - 14 September 2009 through 18 September 2009
ER -