Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces

Mohamed Abd Allah; Robert Thalhammer; Jyrki Kaitila; Thomas Herzog; Werner Weber; Doris Schmitt-Landsiedel

doi:10.1016/j.sse.2010.04.031

Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces

Mohamed Abd Allah, Robert Thalhammer, Jyrki Kaitila, Thomas Herzog, Werner Weber, Doris Schmitt-Landsiedel

Medicine and Health

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We present a new method to manufacture solidly mounted bulk acoustic wave resonators. This new process introduces the use of wafer bonding techniques and sacrificial surface removal to manufacture solidly mounted resonators having special properties. With the proposed process, Aluminum Nitride (AlN) thin films are obtained having exceptional c-axis crystal orientation with XRD rocking curve FWHM of 1.36° and material electromechanical coupling constant of 6.8% exceeding that of the epitaxial AlN electromechanical coupling constant. Fully functional single-mask resonators were successfully fabricated with this process working around 2.35 GHz and enjoying Q-values as high as 1300.

Original language	English
Pages (from-to)	1041-1046
Number of pages	6
Journal	Solid-State Electronics
Volume	54
Issue number	9
DOIs	https://doi.org/10.1016/j.sse.2010.04.031
State	Published - Sep 2010

Keywords

AlN
BAW
Coupling coefficient
Layer-transfer
SMR
XRD

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10.1016/j.sse.2010.04.031

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title = "Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces",

abstract = "We present a new method to manufacture solidly mounted bulk acoustic wave resonators. This new process introduces the use of wafer bonding techniques and sacrificial surface removal to manufacture solidly mounted resonators having special properties. With the proposed process, Aluminum Nitride (AlN) thin films are obtained having exceptional c-axis crystal orientation with XRD rocking curve FWHM of 1.36° and material electromechanical coupling constant of 6.8% exceeding that of the epitaxial AlN electromechanical coupling constant. Fully functional single-mask resonators were successfully fabricated with this process working around 2.35 GHz and enjoying Q-values as high as 1300.",

keywords = "AlN, BAW, Coupling coefficient, Layer-transfer, SMR, XRD",

author = "{Abd Allah}, Mohamed and Robert Thalhammer and Jyrki Kaitila and Thomas Herzog and Werner Weber and Doris Schmitt-Landsiedel",

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AU - Abd Allah, Mohamed

AU - Thalhammer, Robert

AU - Kaitila, Jyrki

AU - Herzog, Thomas

AU - Weber, Werner

AU - Schmitt-Landsiedel, Doris

PY - 2010/9

Y1 - 2010/9

N2 - We present a new method to manufacture solidly mounted bulk acoustic wave resonators. This new process introduces the use of wafer bonding techniques and sacrificial surface removal to manufacture solidly mounted resonators having special properties. With the proposed process, Aluminum Nitride (AlN) thin films are obtained having exceptional c-axis crystal orientation with XRD rocking curve FWHM of 1.36° and material electromechanical coupling constant of 6.8% exceeding that of the epitaxial AlN electromechanical coupling constant. Fully functional single-mask resonators were successfully fabricated with this process working around 2.35 GHz and enjoying Q-values as high as 1300.

AB - We present a new method to manufacture solidly mounted bulk acoustic wave resonators. This new process introduces the use of wafer bonding techniques and sacrificial surface removal to manufacture solidly mounted resonators having special properties. With the proposed process, Aluminum Nitride (AlN) thin films are obtained having exceptional c-axis crystal orientation with XRD rocking curve FWHM of 1.36° and material electromechanical coupling constant of 6.8% exceeding that of the epitaxial AlN electromechanical coupling constant. Fully functional single-mask resonators were successfully fabricated with this process working around 2.35 GHz and enjoying Q-values as high as 1300.

KW - AlN

KW - BAW

KW - Coupling coefficient

KW - Layer-transfer

KW - SMR

KW - XRD

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DO - 10.1016/j.sse.2010.04.031

M3 - Article

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SN - 0038-1101

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SP - 1041

EP - 1046

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces

Abstract

Keywords

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