Solid-state and nanoelectronic devices-spin devices, batteries and steep slope FETs

Research output: Contribution to journal › Editorial

Original language	English
Article number	4796638
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2008.4796638
State	Published - 2008
Externally published	Yes
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 15 Dec 2008 → 17 Dec 2008

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title = "Solid-state and nanoelectronic devices-spin devices, batteries and steep slope FETs",

author = "Franz Kreupl and Jing Guo",

year = "2008",

doi = "10.1109/IEDM.2008.4796638",

language = "English",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

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T1 - Solid-state and nanoelectronic devices-spin devices, batteries and steep slope FETs

AU - Kreupl, Franz

AU - Guo, Jing

PY - 2008

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M3 - Editorial

AN - SCOPUS:64549101495

SN - 0163-1918

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

M1 - 4796638

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -