Abstract
Solid polyelectrolytes have been used in transistor devices to achieve gating with high capacitance. We use a solid polyethylene oxide/LiClO 4 electrolyte to replace aqueous electrolytes as a gate for surface-conductive diamond field-effect transistors (FET). The resulting transistor shows characteristics comparable to those of aqueous electrolyte-gated diamond FETs. We investigate the polyelectrolyte/diamond interface with impedance spectroscopy and cyclic voltammetry, showing the electrochemical stability of the interface and capacitive gating up to 100 Hz. Hall effect measurements on the polyelectrolyte-gated devices are compared to those with liquid gates. The solid and transparent polyelectrolyte gates promise further applications for surface-conductive diamond FETs.
Original language | English |
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Article number | 023510 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 2 |
DOIs | |
State | Published - 9 Jan 2012 |