Soft Errors in Negative Capacitance FDSOI SRAMs

This is the first work to investigate the susceptibility of Negative Capacitance Fully Depleted Silicon on Insulator (N C-FDSOI) SRAMs against radiation. Using TCAD models, which are well calibrated to reproduce 14nm measurements for n-type and p-type FDSOI devices, the impact of heavy-ions at different intensities on NC-FDSOI SRAMs is studied in detail. The baseline (counterpart) FDSOI SRAM is also studied in TCAD mixed-mode simulations as well and results are compared with NC-FDSOI SRAMs. Our analysis demonstrates that due to the internal voltage amplification and the better electrostatic integrity provided by the ferroelectric (FE) layer, NC-FDSOI SRAMs exhibit a larger resiliency to radiation than baseline FDSOI SRAMs. This is evidenced by the larger critical charge required to flip the data stored in NC-FDSOI SRAMs. In addition, for low-power applications (which is the key goal behind N C technology) where a lower voltage is used, NC-FDSOI SRAMs still show a higher resiliency to soft errors than the baseline FDSOI SRAMs.