Small signal equivalent circuit model of buried tunnel junction VCSEL chips

Guizhi Xu, W. Hofmann, Hengpei Huang, Tao Zhang, Liang Xie, Ninghua Zhu, M. C. Amann

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

An equivalent circuit model for a 1.55 μm buried tunnel junction VCSEL chip is proposed. The model is based on the semiconductor laser rate equations and the structure of the VCSEL chip, and every element in the circuit is represented. Values of the elements of the circuit are established using the reflection coefficient and transmission frequency response data. The simulation results agree well with experimental data at different bias currents, verifying the validity of the equivalent circuit model.

Original languageEnglish
Pages (from-to)2015-2018
Number of pages4
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume27
Issue number11
StatePublished - Nov 2006

Keywords

  • Equivalent circuit model
  • S parameter
  • Simulation
  • VCSEL

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