Small-area GaAs-GaAlAs heterostructure light-emitting diode with improved current confinement

M. C. Amann; W. Proebster

doi:10.1049/el:19790430

Small-area GaAs-GaAlAs heterostructure light-emitting diode with improved current confinement

M. C. Amann, W. Proebster

Chair of Semiconductor Technology

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A new type of high-radiance GaAs-GaAlAs heterostructure light-emitting diode (l.e.d.) with confinement of the light-emitting area by contact resistance is described. Single heterostructure l.e.d.s of this type with active-region doping of p = 3 × 10¹⁸ cm⁻³ exhibit external quantum efficiency of 1% and a 3 dB modulation cutoff frequency of 66 MHz. Second-harmonic distortion was measured at below 40 dB at a 30 mA peak-peak modulation current and 50 mA direct current (= 7·0 kA/cm²).

Original language	English
Pages (from-to)	599-600
Number of pages	2
Journal	Electronics Letters
Volume	15
Issue number	19
DOIs	https://doi.org/10.1049/el:19790430
State	Published - 13 Sep 1979

Keywords

Light-emitting diodes

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10.1049/el:19790430

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title = "Small-area GaAs-GaAlAs heterostructure light-emitting diode with improved current confinement",

abstract = "A new type of high-radiance GaAs-GaAlAs heterostructure light-emitting diode (l.e.d.) with confinement of the light-emitting area by contact resistance is described. Single heterostructure l.e.d.s of this type with active-region doping of p = 3 × 1018 cm−3 exhibit external quantum efficiency of 1\% and a 3 dB modulation cutoff frequency of 66 MHz. Second-harmonic distortion was measured at below 40 dB at a 30 mA peak-peak modulation current and 50 mA direct current (= 7·0 kA/cm2).",

keywords = "Light-emitting diodes",

author = "Amann, \{M. C.\} and W. Proebster",

year = "1979",

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T1 - Small-area GaAs-GaAlAs heterostructure light-emitting diode with improved current confinement

AU - Amann, M. C.

AU - Proebster, W.

PY - 1979/9/13

Y1 - 1979/9/13

N2 - A new type of high-radiance GaAs-GaAlAs heterostructure light-emitting diode (l.e.d.) with confinement of the light-emitting area by contact resistance is described. Single heterostructure l.e.d.s of this type with active-region doping of p = 3 × 1018 cm−3 exhibit external quantum efficiency of 1% and a 3 dB modulation cutoff frequency of 66 MHz. Second-harmonic distortion was measured at below 40 dB at a 30 mA peak-peak modulation current and 50 mA direct current (= 7·0 kA/cm2).

AB - A new type of high-radiance GaAs-GaAlAs heterostructure light-emitting diode (l.e.d.) with confinement of the light-emitting area by contact resistance is described. Single heterostructure l.e.d.s of this type with active-region doping of p = 3 × 1018 cm−3 exhibit external quantum efficiency of 1% and a 3 dB modulation cutoff frequency of 66 MHz. Second-harmonic distortion was measured at below 40 dB at a 30 mA peak-peak modulation current and 50 mA direct current (= 7·0 kA/cm2).

KW - Light-emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=0018518329&partnerID=8YFLogxK

U2 - 10.1049/el:19790430

DO - 10.1049/el:19790430

M3 - Article

AN - SCOPUS:0018518329

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VL - 15

SP - 599

EP - 600

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

Small-area GaAs-GaAlAs heterostructure light-emitting diode with improved current confinement

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Keywords

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