TY - JOUR
T1 - Sleep transistor circuits for fine-grained power switch-off with short power-down times
AU - Henzler, Stephan
AU - Nirschl, Thomas
AU - Skiathitis, Stylianos
AU - Berthold, Joerg
AU - Fischer, Juergen
AU - Teichmann, Philip
AU - Bauer, Florian
AU - Georgakos, Georg
AU - Schmitt-Landsiedel, Doris
PY - 2005
Y1 - 2005
N2 - Fine-grained sleep transistor circuits are demonstrated with 0.12μm 16b MAC. Standby power is reduced by a factor of 5500 at 85°C with speed reduction of 5%. Charge recycling reduces the minimum sleep time by 25%. Dynamic power dissipation decreases by 16% activating a fraction of the switch in slow mode. Double switching inhibits power-on glitches and reduces current spikes by 38%.
AB - Fine-grained sleep transistor circuits are demonstrated with 0.12μm 16b MAC. Standby power is reduced by a factor of 5500 at 85°C with speed reduction of 5%. Charge recycling reduces the minimum sleep time by 25%. Dynamic power dissipation decreases by 16% activating a fraction of the switch in slow mode. Double switching inhibits power-on glitches and reduces current spikes by 38%.
UR - http://www.scopus.com/inward/record.url?scp=28144457997&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:28144457997
SN - 0193-6530
VL - 48
SP - 244-245+622
JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
M1 - 16.6
T2 - 2005 IEEE International Solid-State Circuits Conference, ISSCC
Y2 - 6 February 2005 through 10 February 2005
ER -