Sleep transistor circuits for fine-grained power switch-off with short power-down times

Stephan Henzler, Thomas Nirschl, Stylianos Skiathitis, Joerg Berthold, Juergen Fischer, Philip Teichmann, Florian Bauer, Georg Georgakos, Doris Schmitt-Landsiedel

Research output: Contribution to journalConference articlepeer-review

Abstract

Fine-grained sleep transistor circuits are demonstrated with 0.12μm 16b MAC. Standby power is reduced by a factor of 5500 at 85°C with speed reduction of 5%. Charge recycling reduces the minimum sleep time by 25%. Dynamic power dissipation decreases by 16% activating a fraction of the switch in slow mode. Double switching inhibits power-on glitches and reduces current spikes by 38%.

Original languageEnglish
Article number16.6
Pages (from-to)244-245+622
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume48
StatePublished - 2005
Event2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States
Duration: 6 Feb 200510 Feb 2005

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