Single-particle and transport scattering times in narrow GaAs/AlxGa1-xAs quantum wells

The in-plane motion of electrons in narrow GaAs/AlxGa1-xAs multiple quantum wells is studied experimentally and theoretically as a function of the electron density ns and the well width Lz. Two characteristic lifetimese the single-particle relaxation time s and the transport scattering time te are obtained from magnetotransport measurements. By comparing s and t with detailed calculations, the contributions of interface roughness, remote impurity, and alloy disorder scattering are investigated separately.