Single-Mode High-Speed 1.5-μm VCSELs

Silvia Spiga; Wouter Soenen; Alexander Andrejew; Dean Maximilian Schoke; Xin Yin; Johan Bauwelinck; Gerhard Boehm; Markus Christian Amann

doi:10.1109/JLT.2016.2597870

Single-Mode High-Speed 1.5-μm VCSELs

Silvia Spiga, Wouter Soenen, Alexander Andrejew, Dean Maximilian Schoke, Xin Yin, Johan Bauwelinck, Gerhard Boehm, Markus Christian Amann

Chair of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

Single-mode 1.5-μm InP-based vertical-cavity surface-emitting lasers (VCSELs) with a 1.5-λ-long semiconductor cavity and two dielectric distributed Bragg reflectors (DBRs) are presented. The electrical, thermal, and optical characteristics are studied as a function of tunnel junction diameter and for different temperatures ranging from -10 up to 65 °C. Small-signal modulation bandwidths in excess of 21 GHz at room temperature are demonstrated for a DC power consumption below 10 mW. In this paper, the superior dynamic characteristics of these VCSELs are shown by demonstrating operation at data rates up to 50 Gb/s with bit-error-ratio slightly above 10^-12 in back-to-back configuration by nonreturn-to-zero modulation and without any equalization. Neither forward error correction nor digital signal processing was required.

Original language	English
Article number	7533475
Pages (from-to)	727-733
Number of pages	7
Journal	Journal of Lightwave Technology
Volume	35
Issue number	4
DOIs	https://doi.org/10.1109/JLT.2016.2597870
State	Published - 15 Feb 2017

Keywords

InP
optical modulation
semiconductor laser
vertical-cavity surface-emitting lasers (VCSELs)

Access to Document

10.1109/JLT.2016.2597870

Cite this

@article{ca4076e988eb4f9bbd3529047f5a14d6,

title = "Single-Mode High-Speed 1.5-μm VCSELs",

abstract = "Single-mode 1.5-μm InP-based vertical-cavity surface-emitting lasers (VCSELs) with a 1.5-λ-long semiconductor cavity and two dielectric distributed Bragg reflectors (DBRs) are presented. The electrical, thermal, and optical characteristics are studied as a function of tunnel junction diameter and for different temperatures ranging from -10 up to 65 °C. Small-signal modulation bandwidths in excess of 21 GHz at room temperature are demonstrated for a DC power consumption below 10 mW. In this paper, the superior dynamic characteristics of these VCSELs are shown by demonstrating operation at data rates up to 50 Gb/s with bit-error-ratio slightly above 10-12 in back-to-back configuration by nonreturn-to-zero modulation and without any equalization. Neither forward error correction nor digital signal processing was required.",

keywords = "InP, optical modulation, semiconductor laser, vertical-cavity surface-emitting lasers (VCSELs)",

author = "Silvia Spiga and Wouter Soenen and Alexander Andrejew and Schoke, {Dean Maximilian} and Xin Yin and Johan Bauwelinck and Gerhard Boehm and Amann, {Markus Christian}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2017",

month = feb,

day = "15",

doi = "10.1109/JLT.2016.2597870",

language = "English",

volume = "35",

pages = "727--733",

journal = "Journal of Lightwave Technology",

issn = "0733-8724",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Single-Mode High-Speed 1.5-μm VCSELs

AU - Spiga, Silvia

AU - Soenen, Wouter

AU - Andrejew, Alexander

AU - Schoke, Dean Maximilian

AU - Yin, Xin

AU - Bauwelinck, Johan

AU - Boehm, Gerhard

AU - Amann, Markus Christian

PY - 2017/2/15

Y1 - 2017/2/15

N2 - Single-mode 1.5-μm InP-based vertical-cavity surface-emitting lasers (VCSELs) with a 1.5-λ-long semiconductor cavity and two dielectric distributed Bragg reflectors (DBRs) are presented. The electrical, thermal, and optical characteristics are studied as a function of tunnel junction diameter and for different temperatures ranging from -10 up to 65 °C. Small-signal modulation bandwidths in excess of 21 GHz at room temperature are demonstrated for a DC power consumption below 10 mW. In this paper, the superior dynamic characteristics of these VCSELs are shown by demonstrating operation at data rates up to 50 Gb/s with bit-error-ratio slightly above 10-12 in back-to-back configuration by nonreturn-to-zero modulation and without any equalization. Neither forward error correction nor digital signal processing was required.

AB - Single-mode 1.5-μm InP-based vertical-cavity surface-emitting lasers (VCSELs) with a 1.5-λ-long semiconductor cavity and two dielectric distributed Bragg reflectors (DBRs) are presented. The electrical, thermal, and optical characteristics are studied as a function of tunnel junction diameter and for different temperatures ranging from -10 up to 65 °C. Small-signal modulation bandwidths in excess of 21 GHz at room temperature are demonstrated for a DC power consumption below 10 mW. In this paper, the superior dynamic characteristics of these VCSELs are shown by demonstrating operation at data rates up to 50 Gb/s with bit-error-ratio slightly above 10-12 in back-to-back configuration by nonreturn-to-zero modulation and without any equalization. Neither forward error correction nor digital signal processing was required.

KW - InP

KW - optical modulation

KW - semiconductor laser

KW - vertical-cavity surface-emitting lasers (VCSELs)

UR - http://www.scopus.com/inward/record.url?scp=85015735241&partnerID=8YFLogxK

U2 - 10.1109/JLT.2016.2597870

DO - 10.1109/JLT.2016.2597870

M3 - Article

AN - SCOPUS:85015735241

SN - 0733-8724

VL - 35

SP - 727

EP - 733

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

IS - 4

M1 - 7533475

ER -

Single-Mode High-Speed 1.5-μm VCSELs

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this