Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers

Kristijonas Vizbaras; Kaveh Kashani-Shirazi; Markus Christian Amann

doi:10.1063/1.3207826

Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers

Kristijonas Vizbaras
, Kaveh Kashani-Shirazi
, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Simultaneous two-level lasing, corresponding to ground level and excited level transitions in GaInAsSb/GaSb quantum well lasers under continuous wave operation is reported. The effect is attributed to a slowed-down intersubband relaxation in the quantum wells due to buildup of hot phonon population resulting in an incomplete clamping of the excited state population above the ground level lasing threshold.

Original language	English
Article number	071107
Journal	Applied Physics Letters
Volume	95
Issue number	7
DOIs	https://doi.org/10.1063/1.3207826
State	Published - 2009

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10.1063/1.3207826

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@article{1ee98e0f666b4deca41b983a4326e68b,

title = "Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers",

abstract = "Simultaneous two-level lasing, corresponding to ground level and excited level transitions in GaInAsSb/GaSb quantum well lasers under continuous wave operation is reported. The effect is attributed to a slowed-down intersubband relaxation in the quantum wells due to buildup of hot phonon population resulting in an incomplete clamping of the excited state population above the ground level lasing threshold.",

author = "Kristijonas Vizbaras and Kaveh Kashani-Shirazi and Amann, \{Markus Christian\}",

year = "2009",

doi = "10.1063/1.3207826",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

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T1 - Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers

AU - Vizbaras, Kristijonas

AU - Kashani-Shirazi, Kaveh

AU - Amann, Markus Christian

PY - 2009

Y1 - 2009

N2 - Simultaneous two-level lasing, corresponding to ground level and excited level transitions in GaInAsSb/GaSb quantum well lasers under continuous wave operation is reported. The effect is attributed to a slowed-down intersubband relaxation in the quantum wells due to buildup of hot phonon population resulting in an incomplete clamping of the excited state population above the ground level lasing threshold.

AB - Simultaneous two-level lasing, corresponding to ground level and excited level transitions in GaInAsSb/GaSb quantum well lasers under continuous wave operation is reported. The effect is attributed to a slowed-down intersubband relaxation in the quantum wells due to buildup of hot phonon population resulting in an incomplete clamping of the excited state population above the ground level lasing threshold.

UR - https://www.scopus.com/pages/publications/69249176171

U2 - 10.1063/1.3207826

DO - 10.1063/1.3207826

M3 - Article

AN - SCOPUS:69249176171

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071107

ER -

Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers

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