TY - JOUR
T1 - Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers
AU - Vizbaras, Kristijonas
AU - Kashani-Shirazi, Kaveh
AU - Amann, Markus Christian
PY - 2009
Y1 - 2009
N2 - Simultaneous two-level lasing, corresponding to ground level and excited level transitions in GaInAsSb/GaSb quantum well lasers under continuous wave operation is reported. The effect is attributed to a slowed-down intersubband relaxation in the quantum wells due to buildup of hot phonon population resulting in an incomplete clamping of the excited state population above the ground level lasing threshold.
AB - Simultaneous two-level lasing, corresponding to ground level and excited level transitions in GaInAsSb/GaSb quantum well lasers under continuous wave operation is reported. The effect is attributed to a slowed-down intersubband relaxation in the quantum wells due to buildup of hot phonon population resulting in an incomplete clamping of the excited state population above the ground level lasing threshold.
UR - http://www.scopus.com/inward/record.url?scp=69249176171&partnerID=8YFLogxK
U2 - 10.1063/1.3207826
DO - 10.1063/1.3207826
M3 - Article
AN - SCOPUS:69249176171
SN - 0003-6951
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 7
M1 - 071107
ER -