Simulation of the dissolved oxygen concentration and the pH value at the O2-FET

J. Wiest, S. Blank, M. Brischwein, H. Grothe, B. Wolf

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The 02-FET is a pH ion sensitive field effect transistor (ISFET) modified to measure dissolved oxygen via the acidification from an amperometric dissolved oxygen microsensor. A diffusion based finite elements model which describes the transactions at the O2-FET is introduced. Results of real measurements and of the simulation are corresponding. Therefore it is concluded that the diffusion based model is sufficient to describe the main properties of the O2-FET.

Original languageEnglish
Title of host publicationProceedings of the 6th IASTED International Conference on Biomedical Engineering, BioMED 2008
Pages151-155
Number of pages5
StatePublished - 2008
Event6th IASTED International Conference on Biomedical Engineering, BioMED 2008 - Innsbruck, Austria
Duration: 13 Feb 200815 Feb 2008

Publication series

NameProceedings of the 6th IASTED International Conference on Biomedical Engineering, BioMED 2008

Conference

Conference6th IASTED International Conference on Biomedical Engineering, BioMED 2008
Country/TerritoryAustria
CityInnsbruck
Period13/02/0815/02/08

Keywords

  • Diffusion
  • Dissolved oxygen
  • Finite elements simulation
  • ISFET

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