Simulation of silicon nanowire tunneling field-effect transistors including quantum effects

Alexander Heigl; Gerhard Wachutka

doi:10.1109/ISDRS.2007.4422252

Simulation of silicon nanowire tunneling field-effect transistors including quantum effects

Alexander Heigl, Gerhard Wachutka

Computation, Information and Technology

Technical University of Munich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422252
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

Access to Document

10.1109/ISDRS.2007.4422252

Cite this

@inproceedings{b8c0ab5d4b684312b74a25c45fb62ec9,

title = "Simulation of silicon nanowire tunneling field-effect transistors including quantum effects",

author = "Alexander Heigl and Gerhard Wachutka",

year = "2007",

doi = "10.1109/ISDRS.2007.4422252",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Heigl, A & Wachutka, G 2007, Simulation of silicon nanowire tunneling field-effect transistors including quantum effects. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422252, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422252

Simulation of silicon nanowire tunneling field-effect transistors including quantum effects. / Heigl, Alexander; Wachutka, Gerhard.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422252 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Simulation of silicon nanowire tunneling field-effect transistors including quantum effects

AU - Heigl, Alexander

AU - Wachutka, Gerhard

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949105543&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422252

DO - 10.1109/ISDRS.2007.4422252

M3 - Conference contribution

AN - SCOPUS:44949105543

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Simulation of silicon nanowire tunneling field-effect transistors including quantum effects

Publication series

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