Abstract
Extensive studies of simulation of recombination pumped Aluminum soft X-ray lasers scheme have been performed. Gain is observed for the H-like n=3-2 and He-like n=4-3 transition. It is shown that with shorter pulse driving lasers, gain increases. The dependence of gain on the driving laser pulse width is explained by the relation of electron temperature, electron density and ion ground state population with three body recombination process. Agreement is achieved between simulation and experiment for population inversions between the He-Like Al n=4-3 levels.
Original language | English |
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Pages (from-to) | 285-288 |
Number of pages | 4 |
Journal | Progress in Crystal Growth and Characterization of Materials |
Volume | 33 |
Issue number | 1-3 |
DOIs | |
State | Published - 1996 |
Externally published | Yes |