TY - GEN
T1 - Simulation of orientation-dependent etching of silicon using a new step flow model of 3D structuring
AU - Horn, A.
AU - Schröder, H.
AU - Obermeier, E.
AU - Wachutka, G.
PY - 2000
Y1 - 2000
N2 - We present a new model of three-dimensional orientation-dependent etching of Si{100}. Recent experimental results suggest to conceive etching as a "peeling" process of terraced planes, leading to the concept of a "step flow model of 3D structuring". In particular, a first implementation in a numerical simulation tool allowed us to correctly reproduce the observed details of convex corner (CC) undercutting in pure aqueous KOH solutions (Fig. 2). The new aspect incorporated in this model is the experimental finding that the so-called "fast etching planes", which commonly are referred to as cause of the characteristic shape of underetched convex corners of the etchmask, are not really crystallographic planes. Instead these areas, denoted as "B" in Fig. 2, are the envelope surfaces of a bunched sequence of 〈110〉 oriented steplines with kink sites on the intersecting {111} planes. The typical morphology occurring at underetched convex corners is correctly retrieved by our simulation approach, as it can be verified by comparison with SEM micrographs (Fig. 1, Fig. 2).
AB - We present a new model of three-dimensional orientation-dependent etching of Si{100}. Recent experimental results suggest to conceive etching as a "peeling" process of terraced planes, leading to the concept of a "step flow model of 3D structuring". In particular, a first implementation in a numerical simulation tool allowed us to correctly reproduce the observed details of convex corner (CC) undercutting in pure aqueous KOH solutions (Fig. 2). The new aspect incorporated in this model is the experimental finding that the so-called "fast etching planes", which commonly are referred to as cause of the characteristic shape of underetched convex corners of the etchmask, are not really crystallographic planes. Instead these areas, denoted as "B" in Fig. 2, are the envelope surfaces of a bunched sequence of 〈110〉 oriented steplines with kink sites on the intersecting {111} planes. The typical morphology occurring at underetched convex corners is correctly retrieved by our simulation approach, as it can be verified by comparison with SEM micrographs (Fig. 1, Fig. 2).
KW - 3D-Simulation
KW - Orientation-Dependent Wet Chemical Etching
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=6344280998&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:6344280998
SN - 0966613570
T3 - 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
SP - 63
EP - 66
BT - 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
A2 - Laudon, M.
A2 - Romanowicz, B.
T2 - 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
Y2 - 27 March 2000 through 29 March 2000
ER -