TY - GEN
T1 - Simulation of advanced tunneling devices
AU - Heigl, A.
AU - Wachutka, G.
PY - 2006
Y1 - 2006
N2 - The progressive shrinking of the physical gate length of MOS devices involves problems such as punch-through, DIBL, and roll-off In order to cope with short channel effects in nanoscale MOS devices, alternative device concepts, among others the tunnel FET, have been suggested. The proper description of the operation of these devices requires the consideration of two mechanisms of electron tunneling through the bandgap: Defect-assisted and phonon-assisted tunneling. Both prove to be crucial for predictive device simulation, making it possible to obtain realistic device characteristics of tunneling transistors.
AB - The progressive shrinking of the physical gate length of MOS devices involves problems such as punch-through, DIBL, and roll-off In order to cope with short channel effects in nanoscale MOS devices, alternative device concepts, among others the tunnel FET, have been suggested. The proper description of the operation of these devices requires the consideration of two mechanisms of electron tunneling through the bandgap: Defect-assisted and phonon-assisted tunneling. Both prove to be crucial for predictive device simulation, making it possible to obtain realistic device characteristics of tunneling transistors.
UR - https://www.scopus.com/pages/publications/46749124774
U2 - 10.1109/ASDAM.2006.331169
DO - 10.1109/ASDAM.2006.331169
M3 - Conference contribution
AN - SCOPUS:46749124774
SN - 1424403960
SN - 9781424403967
T3 - Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
SP - 121
EP - 124
BT - Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
T2 - 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
Y2 - 16 October 2006 through 18 October 2006
ER -