TY - GEN
T1 - Simulation of active regions for GaSb-based VCSELs
AU - Kashani-Shirazi, Kaveh
AU - Bachmann, Alexander
AU - Amann, Markus Christian
PY - 2008
Y1 - 2008
N2 - The calculation of band structures and the carrier densities leads to new rules for the optimization of the active region in GaSb-based VCSELs emitting at 2.3 μm. The simulation was performed with Nextnano++.
AB - The calculation of band structures and the carrier densities leads to new rules for the optimization of the active region in GaSb-based VCSELs emitting at 2.3 μm. The simulation was performed with Nextnano++.
UR - http://www.scopus.com/inward/record.url?scp=56449100993&partnerID=8YFLogxK
U2 - 10.1109/INOW.2008.4634483
DO - 10.1109/INOW.2008.4634483
M3 - Conference contribution
AN - SCOPUS:56449100993
SN - 9781424426560
T3 - 2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications
SP - 137
EP - 138
BT - 2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications
T2 - 2008 International Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With International Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st International Symposium on Optical Communications
Y2 - 2 August 2008 through 15 August 2008
ER -