Silver metal organic chemical vapor deposition for advanced silver metallization

L. Gao; P. Härter; Ch Linsmeier; A. Wiltner; R. Emling; D. Schmitt-Landsiedel

doi:10.1016/j.mee.2005.07.078

Silver metal organic chemical vapor deposition for advanced silver metallization

L. Gao, P. Härter, Ch Linsmeier, A. Wiltner, R. Emling, D. Schmitt-Landsiedel

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The use of silver interconnects enables higher speed for silicon integrated circuits. The formation of Ag interconnects requires sequential deposition of a continuous barrier layer followed by silver deposition and chemical-mechanical polishing (CMP). In this article, various organometallic precursors (hfac)Ag(1,5-COD), (fod)Ag(PEt₃) and (hfac)Ag(VTES) for the metal organic chemical vapor deposition (MOCVD) of silver on a TiN adhesion layer were evaluated and their deposition characteristics was studied. It was confirmed that Ag could be deposited at a substrate temperature as low as 180 °C with (hfac)Ag(VTES). The silver thin film was deposited at a precursor vaporization temperature of 50 °C and a substrate temperature of 220-250 °C, resulting in Ag film with resistivity around 1.8-2.0 μΩ cm.

Original language	English
Pages (from-to)	296-300
Number of pages	5
Journal	Microelectronic Engineering
Volume	82
Issue number	3-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mee.2005.07.078
State	Published - Dec 2005

Keywords

MOCVD
Silver metallization
Silver precursor
Thin film

Access to Document

10.1016/j.mee.2005.07.078

Cite this

@article{f3632709756346d79cb3631956354130,

title = "Silver metal organic chemical vapor deposition for advanced silver metallization",

abstract = "The use of silver interconnects enables higher speed for silicon integrated circuits. The formation of Ag interconnects requires sequential deposition of a continuous barrier layer followed by silver deposition and chemical-mechanical polishing (CMP). In this article, various organometallic precursors (hfac)Ag(1,5-COD), (fod)Ag(PEt3) and (hfac)Ag(VTES) for the metal organic chemical vapor deposition (MOCVD) of silver on a TiN adhesion layer were evaluated and their deposition characteristics was studied. It was confirmed that Ag could be deposited at a substrate temperature as low as 180 °C with (hfac)Ag(VTES). The silver thin film was deposited at a precursor vaporization temperature of 50 °C and a substrate temperature of 220-250 °C, resulting in Ag film with resistivity around 1.8-2.0 μΩ cm.",

keywords = "MOCVD, Silver metallization, Silver precursor, Thin film",

author = "L. Gao and P. H{\"a}rter and Ch Linsmeier and A. Wiltner and R. Emling and D. Schmitt-Landsiedel",

year = "2005",

month = dec,

doi = "10.1016/j.mee.2005.07.078",

language = "English",

volume = "82",

pages = "296--300",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "3-4 SPEC. ISS.",

}

TY - JOUR

T1 - Silver metal organic chemical vapor deposition for advanced silver metallization

AU - Gao, L.

AU - Härter, P.

AU - Linsmeier, Ch

AU - Wiltner, A.

AU - Emling, R.

AU - Schmitt-Landsiedel, D.

PY - 2005/12

Y1 - 2005/12

N2 - The use of silver interconnects enables higher speed for silicon integrated circuits. The formation of Ag interconnects requires sequential deposition of a continuous barrier layer followed by silver deposition and chemical-mechanical polishing (CMP). In this article, various organometallic precursors (hfac)Ag(1,5-COD), (fod)Ag(PEt3) and (hfac)Ag(VTES) for the metal organic chemical vapor deposition (MOCVD) of silver on a TiN adhesion layer were evaluated and their deposition characteristics was studied. It was confirmed that Ag could be deposited at a substrate temperature as low as 180 °C with (hfac)Ag(VTES). The silver thin film was deposited at a precursor vaporization temperature of 50 °C and a substrate temperature of 220-250 °C, resulting in Ag film with resistivity around 1.8-2.0 μΩ cm.

AB - The use of silver interconnects enables higher speed for silicon integrated circuits. The formation of Ag interconnects requires sequential deposition of a continuous barrier layer followed by silver deposition and chemical-mechanical polishing (CMP). In this article, various organometallic precursors (hfac)Ag(1,5-COD), (fod)Ag(PEt3) and (hfac)Ag(VTES) for the metal organic chemical vapor deposition (MOCVD) of silver on a TiN adhesion layer were evaluated and their deposition characteristics was studied. It was confirmed that Ag could be deposited at a substrate temperature as low as 180 °C with (hfac)Ag(VTES). The silver thin film was deposited at a precursor vaporization temperature of 50 °C and a substrate temperature of 220-250 °C, resulting in Ag film with resistivity around 1.8-2.0 μΩ cm.

KW - MOCVD

KW - Silver metallization

KW - Silver precursor

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=28044438936&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2005.07.078

DO - 10.1016/j.mee.2005.07.078

M3 - Article

AN - SCOPUS:28044438936

SN - 0167-9317

VL - 82

SP - 296

EP - 300

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 3-4 SPEC. ISS.

ER -

Silver metal organic chemical vapor deposition for advanced silver metallization

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this