TY - JOUR
T1 - Silver metal organic chemical vapor deposition for advanced silver metallization
AU - Gao, L.
AU - Härter, P.
AU - Linsmeier, Ch
AU - Wiltner, A.
AU - Emling, R.
AU - Schmitt-Landsiedel, D.
PY - 2005/12
Y1 - 2005/12
N2 - The use of silver interconnects enables higher speed for silicon integrated circuits. The formation of Ag interconnects requires sequential deposition of a continuous barrier layer followed by silver deposition and chemical-mechanical polishing (CMP). In this article, various organometallic precursors (hfac)Ag(1,5-COD), (fod)Ag(PEt3) and (hfac)Ag(VTES) for the metal organic chemical vapor deposition (MOCVD) of silver on a TiN adhesion layer were evaluated and their deposition characteristics was studied. It was confirmed that Ag could be deposited at a substrate temperature as low as 180 °C with (hfac)Ag(VTES). The silver thin film was deposited at a precursor vaporization temperature of 50 °C and a substrate temperature of 220-250 °C, resulting in Ag film with resistivity around 1.8-2.0 μΩ cm.
AB - The use of silver interconnects enables higher speed for silicon integrated circuits. The formation of Ag interconnects requires sequential deposition of a continuous barrier layer followed by silver deposition and chemical-mechanical polishing (CMP). In this article, various organometallic precursors (hfac)Ag(1,5-COD), (fod)Ag(PEt3) and (hfac)Ag(VTES) for the metal organic chemical vapor deposition (MOCVD) of silver on a TiN adhesion layer were evaluated and their deposition characteristics was studied. It was confirmed that Ag could be deposited at a substrate temperature as low as 180 °C with (hfac)Ag(VTES). The silver thin film was deposited at a precursor vaporization temperature of 50 °C and a substrate temperature of 220-250 °C, resulting in Ag film with resistivity around 1.8-2.0 μΩ cm.
KW - MOCVD
KW - Silver metallization
KW - Silver precursor
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=28044438936&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2005.07.078
DO - 10.1016/j.mee.2005.07.078
M3 - Article
AN - SCOPUS:28044438936
SN - 0167-9317
VL - 82
SP - 296
EP - 300
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 3-4 SPEC. ISS.
ER -