Silicon/germanium quantum structures

Gerhard Abstreiter

doi:10.1016/0038-1098(94)90852-4

Silicon/germanium quantum structures

Gerhard Abstreiter

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The advances in fabrication of high quality Si/Ge heterostructures and superlattices are discussed with respect to their improved electrical and optical properties. Special emphasis is put on the study of high electron and hole mobilities in Si and Ge and on inter- and intraband optical properties.

Original language	English
Pages (from-to)	5-10
Number of pages	6
Journal	Solid State Communications
Volume	92
Issue number	1-2
DOIs	https://doi.org/10.1016/0038-1098(94)90852-4
State	Published - Oct 1994

Keywords

A. heterojunctions
A. quantum wells
B. epitaxy
D. electronic transport
D. optical properties

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10.1016/0038-1098(94)90852-4

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title = "Silicon/germanium quantum structures",

abstract = "The advances in fabrication of high quality Si/Ge heterostructures and superlattices are discussed with respect to their improved electrical and optical properties. Special emphasis is put on the study of high electron and hole mobilities in Si and Ge and on inter- and intraband optical properties.",

keywords = "A. heterojunctions, A. quantum wells, B. epitaxy, D. electronic transport, D. optical properties",

author = "Gerhard Abstreiter",

year = "1994",

month = oct,

doi = "10.1016/0038-1098(94)90852-4",

language = "English",

volume = "92",

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T1 - Silicon/germanium quantum structures

AU - Abstreiter, Gerhard

PY - 1994/10

Y1 - 1994/10

N2 - The advances in fabrication of high quality Si/Ge heterostructures and superlattices are discussed with respect to their improved electrical and optical properties. Special emphasis is put on the study of high electron and hole mobilities in Si and Ge and on inter- and intraband optical properties.

AB - The advances in fabrication of high quality Si/Ge heterostructures and superlattices are discussed with respect to their improved electrical and optical properties. Special emphasis is put on the study of high electron and hole mobilities in Si and Ge and on inter- and intraband optical properties.

KW - A. heterojunctions

KW - A. quantum wells

KW - B. epitaxy

KW - D. electronic transport

KW - D. optical properties

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U2 - 10.1016/0038-1098(94)90852-4

DO - 10.1016/0038-1098(94)90852-4

M3 - Article

AN - SCOPUS:0028516321

SN - 0038-1098

VL - 92

SP - 5

EP - 10

JO - Solid State Communications

JF - Solid State Communications

IS - 1-2

ER -

Silicon/germanium quantum structures

Abstract

Keywords

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