Silicon waveguide coupled III-V nanowire lasers with epitaxial gain control

T. Stettner; T. Kostenbader; D. Ruhstorfer; J. Bissinger; A. Thurn; H. Riedl; M. Kaniber; G. Koblmüller; J. J. Finley

doi:10.1364/CLEO_SI.2018.SW3B.6

Silicon waveguide coupled III-V nanowire lasers with epitaxial gain control

T. Stettner, T. Kostenbader, D. Ruhstorfer, J. Bissinger, A. Thurn, H. Riedl, M. Kaniber, G. Koblmüller, J. J. Finley

Walter Schottky Institut

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 μm.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2018
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580422
DOIs	https://doi.org/10.1364/CLEO_SI.2018.SW3B.6
State	Published - 2018
Event	CLEO: Science and Innovations, CLEO_SI 2018 - San Jose, United States Duration: 13 May 2018 → 18 May 2018

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F94-CLEO_SI 2018
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2018
Country/Territory	United States
City	San Jose
Period	13/05/18 → 18/05/18

Access to Document

10.1364/CLEO_SI.2018.SW3B.6

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Stettner, T., Kostenbader, T., Ruhstorfer, D., Bissinger, J., Thurn, A., Riedl, H., Kaniber, M., Koblmüller, G., & Finley, J. J. (2018). Silicon waveguide coupled III-V nanowire lasers with epitaxial gain control. In CLEO: Science and Innovations, CLEO_SI 2018 (Optics InfoBase Conference Papers; Vol. Part F94-CLEO_SI 2018). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/CLEO_SI.2018.SW3B.6

@inproceedings{e3b6f0cd63784df8883eac70ba5a026c,

title = "Silicon waveguide coupled III-V nanowire lasers with epitaxial gain control",

abstract = "We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 μm.",

author = "T. Stettner and T. Kostenbader and D. Ruhstorfer and J. Bissinger and A. Thurn and H. Riedl and M. Kaniber and G. Koblm{\"u}ller and Finley, {J. J.}",

note = "Publisher Copyright: {\textcopyright} OSA 2018.; CLEO: Science and Innovations, CLEO_SI 2018 ; Conference date: 13-05-2018 Through 18-05-2018",

year = "2018",

doi = "10.1364/CLEO_SI.2018.SW3B.6",

language = "English",

isbn = "9781943580422",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

booktitle = "CLEO",

}

Stettner, T, Kostenbader, T, Ruhstorfer, D, Bissinger, J, Thurn, A, Riedl, H, Kaniber, M, Koblmüller, G & Finley, JJ 2018, Silicon waveguide coupled III-V nanowire lasers with epitaxial gain control. in CLEO: Science and Innovations, CLEO_SI 2018. Optics InfoBase Conference Papers, vol. Part F94-CLEO_SI 2018, Optica Publishing Group (formerly OSA), CLEO: Science and Innovations, CLEO_SI 2018, San Jose, United States, 13/05/18. https://doi.org/10.1364/CLEO_SI.2018.SW3B.6

Silicon waveguide coupled III-V nanowire lasers with epitaxial gain control. / Stettner, T.; Kostenbader, T.; Ruhstorfer, D. et al.
CLEO: Science and Innovations, CLEO_SI 2018. Optica Publishing Group (formerly OSA), 2018. (Optics InfoBase Conference Papers; Vol. Part F94-CLEO_SI 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Silicon waveguide coupled III-V nanowire lasers with epitaxial gain control

AU - Stettner, T.

AU - Kostenbader, T.

AU - Ruhstorfer, D.

AU - Bissinger, J.

AU - Thurn, A.

AU - Riedl, H.

AU - Kaniber, M.

AU - Koblmüller, G.

AU - Finley, J. J.

PY - 2018

Y1 - 2018

N2 - We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 μm.

AB - We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 μm.

UR - http://www.scopus.com/inward/record.url?scp=85048986873&partnerID=8YFLogxK

U2 - 10.1364/CLEO_SI.2018.SW3B.6

DO - 10.1364/CLEO_SI.2018.SW3B.6

M3 - Conference contribution

AN - SCOPUS:85048986873

SN - 9781943580422

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - Optica Publishing Group (formerly OSA)

T2 - CLEO: Science and Innovations, CLEO_SI 2018

Y2 - 13 May 2018 through 18 May 2018

ER -

Silicon waveguide coupled III-V nanowire lasers with epitaxial gain control

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