Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control

T. Stettner; T. Kostenbader; D. Ruhstorfer; J. Bissinger; A. Thurn; H. Riedl; M. Kaniber; G. Koblmuller; J. J. Finley

Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control

T. Stettner, T. Kostenbader, D. Ruhstorfer, J. Bissinger, A. Thurn, H. Riedl, M. Kaniber, G. Koblmuller, J. J. Finley

Walter Schottky Institut

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 pm.

Original language	English
Title of host publication	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781943580422
State	Published - 6 Aug 2018
Event	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - San Jose, United States Duration: 13 May 2018 → 18 May 2018

Publication series

Name	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

Conference

Conference	2018 Conference on Lasers and Electro-Optics, CLEO 2018
Country/Territory	United States
City	San Jose
Period	13/05/18 → 18/05/18

Cite this

Stettner, T., Kostenbader, T., Ruhstorfer, D., Bissinger, J., Thurn, A., Riedl, H., Kaniber, M., Koblmuller, G., & Finley, J. J. (2018). Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings Article 8428038 (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{9db8e0b2d11b4572aef8dc8de8d4b61e,

title = "Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control",

abstract = "We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 pm.",

author = "T. Stettner and T. Kostenbader and D. Ruhstorfer and J. Bissinger and A. Thurn and H. Riedl and M. Kaniber and G. Koblmuller and Finley, \{J. J.\}",

note = "Publisher Copyright: {\textcopyright} 2018 OSA.; 2018 Conference on Lasers and Electro-Optics, CLEO 2018 ; Conference date: 13-05-2018 Through 18-05-2018",

year = "2018",

month = aug,

day = "6",

language = "English",

isbn = "9781943580422",

series = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

}

Stettner, T, Kostenbader, T, Ruhstorfer, D, Bissinger, J, Thurn, A, Riedl, H, Kaniber, M, Koblmuller, G & Finley, JJ 2018, Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control. in 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings., 8428038, 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2018 Conference on Lasers and Electro-Optics, CLEO 2018, San Jose, United States, 13/05/18.

Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control. / Stettner, T.; Kostenbader, T.; Ruhstorfer, D. et al.
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8428038 (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control

AU - Stettner, T.

AU - Kostenbader, T.

AU - Ruhstorfer, D.

AU - Bissinger, J.

AU - Thurn, A.

AU - Riedl, H.

AU - Kaniber, M.

AU - Koblmuller, G.

AU - Finley, J. J.

PY - 2018/8/6

Y1 - 2018/8/6

N2 - We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 pm.

AB - We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 pm.

UR - http://www.scopus.com/inward/record.url?scp=85052559252&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85052559252

SN - 9781943580422

T3 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

BT - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018

Y2 - 13 May 2018 through 18 May 2018

ER -

Stettner T, Kostenbader T, Ruhstorfer D, Bissinger J, Thurn A, Riedl H et al. Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8428038. (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings).

Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control

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