Silicon PIN Diodes as Neganov–Trofimov–Luke Cryogenic Light Detectors

X. Defay, E. Mondragon, J. C. Lanfranchi, A. Langenkämper, A. Münster, W. Potzel, S. Schönert, S. Wawoczny, M. Willers

Research output: Contribution to journalArticlepeer-review

Abstract

Cryogenic rare event searches based on heat and light composite calorimeters have a common need for large area photon detectors with high quantum efficiency, good radiopurity and high sensitivity. By employing the Neganov–Trofimov–Luke effect, the phonon signal of particle interactions in a semiconductor absorber operated at cryogenic temperatures can be amplified by drifting the photogenerated electrons and holes in an electric field. We present here the most recent results of a Neganov–Trofimov–Luke effect light detector with an electric field configuration optimized to improve the charge collection within the absorber.

Original languageEnglish
Pages (from-to)99-105
Number of pages7
JournalJournal of Low Temperature Physics
Volume194
Issue number1-2
DOIs
StatePublished - 15 Jan 2019
Externally publishedYes

Keywords

  • Charge collection
  • Cryogenic detector
  • Neganov–Trofimov–Luke effect
  • PIN photodiode
  • Silicon
  • Transition edge sensors

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