Silicon-nanowire transistors with intruded nickel-suicide contacts

Walter M. Weber; Lutz Geelhaar; Andrew P. Graham; Eugen Unger; Georg S. Duesberg; Maik Liebau; Werner Pamler; Caroline Chèze; Henning Riechert; Paolo Lugli; Franz Kreupl

doi:10.1021/nl0613858

Silicon-nanowire transistors with intruded nickel-suicide contacts

Walter M. Weber, Lutz Geelhaar, Andrew P. Graham, Eugen Unger, Georg S. Duesberg, Maik Liebau, Werner Pamler, Caroline Chèze, Henning Riechert, Paolo Lugli, Franz Kreupl

Research output: Contribution to journal › Article › peer-review

237 Scopus citations

Abstract

Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-suicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 M A/cm², and exhibited on/off current ratios of up to 10⁷. The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 μm, and decreased exponentially for gate lengths exceeding 1 μm.

Original language	English
Pages (from-to)	2660-2666
Number of pages	7
Journal	Nano Letters
Volume	6
Issue number	12
DOIs	https://doi.org/10.1021/nl0613858
State	Published - Dec 2006
Externally published	Yes

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10.1021/nl0613858

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title = "Silicon-nanowire transistors with intruded nickel-suicide contacts",

abstract = "Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-suicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 M A/cm2, and exhibited on/off current ratios of up to 107. The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 μm, and decreased exponentially for gate lengths exceeding 1 μm.",

author = "Weber, {Walter M.} and Lutz Geelhaar and Graham, {Andrew P.} and Eugen Unger and Duesberg, {Georg S.} and Maik Liebau and Werner Pamler and Caroline Ch{\`e}ze and Henning Riechert and Paolo Lugli and Franz Kreupl",

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doi = "10.1021/nl0613858",

language = "English",

volume = "6",

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T1 - Silicon-nanowire transistors with intruded nickel-suicide contacts

AU - Weber, Walter M.

AU - Geelhaar, Lutz

AU - Graham, Andrew P.

AU - Unger, Eugen

AU - Duesberg, Georg S.

AU - Liebau, Maik

AU - Pamler, Werner

AU - Chèze, Caroline

AU - Riechert, Henning

AU - Lugli, Paolo

AU - Kreupl, Franz

PY - 2006/12

Y1 - 2006/12

N2 - Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-suicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 M A/cm2, and exhibited on/off current ratios of up to 107. The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 μm, and decreased exponentially for gate lengths exceeding 1 μm.

AB - Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-suicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 M A/cm2, and exhibited on/off current ratios of up to 107. The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 μm, and decreased exponentially for gate lengths exceeding 1 μm.

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DO - 10.1021/nl0613858

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SP - 2660

EP - 2666

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Silicon-nanowire transistors with intruded nickel-suicide contacts

Abstract

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