Silicon-nanowire transistors with intruded nickel-suicide contacts

Walter M. Weber, Lutz Geelhaar, Andrew P. Graham, Eugen Unger, Georg S. Duesberg, Maik Liebau, Werner Pamler, Caroline Chèze, Henning Riechert, Paolo Lugli, Franz Kreupl

Research output: Contribution to journalArticlepeer-review

235 Scopus citations


Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-suicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 M A/cm2, and exhibited on/off current ratios of up to 107. The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 μm, and decreased exponentially for gate lengths exceeding 1 μm.

Original languageEnglish
Pages (from-to)2660-2666
Number of pages7
JournalNano Letters
Issue number12
StatePublished - Dec 2006
Externally publishedYes


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