Silicon Nanocrystal Superlattice Nucleation and Growth

Adrien Guillaussier, Yixuan Yu, Vikas Reddy Voggu, Willi Aigner, Camila Saez Cabezas, Daniel W. Houck, Tushti Shah, Detlef M. Smilgies, Rui N. Pereira, Martin Stutzmann, Brian A. Korgel

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Colloidal dodecene-passivated silicon (Si) nanocrystals were dispersed in hexane or chloroform and deposited onto substrates as face-centered cubic superlattices by slowly evaporating the solvent. The uniformity of the nanocrystals enables extended order; however, the solvent and the evaporation protocol significantly influence the self-assembly process, determining the morphology of the films, the extent of order, and the superlattice orientation on the substrate. Chloroform yielded superlattices with step-flow growth morphologies and (111)SL, (100)SL, and (110)SL orientations. Hexane led to mostly island morphologies when evaporated at room temperature with exclusively (111)SL orientations. Higher evaporation temperatures led to more extensive step-flow deposition. A model for the surface diffusion of nanocrystals adsorbed on the superlattice surface is developed.

Original languageEnglish
Pages (from-to)13068-13076
Number of pages9
JournalLangmuir
Volume33
Issue number45
DOIs
StatePublished - 14 Nov 2017

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