TY - JOUR
T1 - Silicon monolithic millimeter-wave integrated circuits
AU - Luy, J. F.
AU - Strohm, K. M.
AU - Buechler, J.
AU - Russer, P.
PY - 1992
Y1 - 1992
N2 - Using silicon as the substrate material, silicon monolithic millimeter-wave integrated circuit (SIMMWIC) oscillators and receivers are successfully realised. For the coplanar oscillators, a slot is used as the resonant structure in which a monolithically integrated IMPATT diode, selectively grown by silicon molecular beam epitaxy (Si-MBE), acts as the negative resistance device. Pulsed and CW operation of the planar oscillators is achieved in the 90 GHz region. The output power is radiated directly from the resonant slot. Complete receivers, with monolithic Schottky diodes together with the antenna, are integrated on a single chip. The suitability of the chips for near-range measurements is pointed out.
AB - Using silicon as the substrate material, silicon monolithic millimeter-wave integrated circuit (SIMMWIC) oscillators and receivers are successfully realised. For the coplanar oscillators, a slot is used as the resonant structure in which a monolithically integrated IMPATT diode, selectively grown by silicon molecular beam epitaxy (Si-MBE), acts as the negative resistance device. Pulsed and CW operation of the planar oscillators is achieved in the 90 GHz region. The output power is radiated directly from the resonant slot. Complete receivers, with monolithic Schottky diodes together with the antenna, are integrated on a single chip. The suitability of the chips for near-range measurements is pointed out.
UR - http://www.scopus.com/inward/record.url?scp=0026871556&partnerID=8YFLogxK
U2 - 10.1049/ip-h-2.1992.0039
DO - 10.1049/ip-h-2.1992.0039
M3 - Article
AN - SCOPUS:0026871556
SN - 0950-107X
VL - 139
SP - 209
EP - 216
JO - IEE Proceedings H: Microwaves, Antennas and Propagation
JF - IEE Proceedings H: Microwaves, Antennas and Propagation
IS - 3
ER -