Silicon High-Resistivity-Substrate Millimeter-Wave Technology

Josef Buechler, Erich Kasper, Peter Russer, Karl M. Strohm

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The application of molecular beam epitaxy (MBE) and X-ray lithography for the fabrication of monolithic integrated millimeter-wave devices on high-resistivity silicon has been investigated. Process compatibility and the retention of high-resistivity characteristics were measured using the spreading resistance method and Hall measurements after various process steps. Microstrip resonators of ring and linear geometry were fabricated on 10 000 Ω.cm silicon substrates. For linear microstrip resonators, the attenuation was found to be less than 0.6 dB/cm at 90 GHz. A 95-GHz IMPATT oscillator circuit and a planar microstrip antenna array have been fabricated on highly insulating silicon substrates. For the oscillator, a combined monolithic—hybrid integration technique was used to attach the discrete IMPATT diode to the resonator circuit. The oscillator does not require tuning elements. Preliminary experimental results are 8 mW of output power with 0.2 percent efficiency at 95 GHz.

Original languageEnglish
Pages (from-to)2047-2052
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume33
Issue number12
DOIs
StatePublished - Dec 1986

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