Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators

Thomas Faust, Johannes Rieger, Maximilian J. Seitner, Jörg P. Kotthaus, Eva M. Weig

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The damping rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent damping of the fundamental and third harmonic transverse flexural mode of a doubly clamped silicon nitride string. It exhibits characteristic maxima reminiscent of two-level defects typical for amorphous materials. Coupling to those defects relaxes the momentum selection rules, allowing energy transfer from discrete long-wavelength resonator modes to the high frequency phonon environment.

Original languageEnglish
Article number100102
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume89
Issue number10
DOIs
StatePublished - 10 Mar 2014
Externally publishedYes

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