SiGe strained layer superlattices

Gerhard Abstreiter

doi:10.1016/0040-6090(89)90423-9

SiGe strained layer superlattices

Gerhard Abstreiter

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

High quality SiGe strained layer superlattices can be achieved by low temperature molecular beam epitaxy. Strain distribution and Brillouin zone folding effects have a large influence on the band structure. Photoluminescence from strain-symmetrized Si₆Ge₄ superlattices shows the first evidence for the achievement of a quasi-direct fundamental energy gap. Raman spectroscopy is used as a versatile tool to characterize short-period SiGe superlattices.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	Thin Solid Films
Volume	183
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(89)90423-9
State	Published - 30 Dec 1989

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10.1016/0040-6090(89)90423-9

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title = "SiGe strained layer superlattices",

abstract = "High quality SiGe strained layer superlattices can be achieved by low temperature molecular beam epitaxy. Strain distribution and Brillouin zone folding effects have a large influence on the band structure. Photoluminescence from strain-symmetrized Si6Ge4 superlattices shows the first evidence for the achievement of a quasi-direct fundamental energy gap. Raman spectroscopy is used as a versatile tool to characterize short-period SiGe superlattices.",

author = "Gerhard Abstreiter",

year = "1989",

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doi = "10.1016/0040-6090(89)90423-9",

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AU - Abstreiter, Gerhard

PY - 1989/12/30

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N2 - High quality SiGe strained layer superlattices can be achieved by low temperature molecular beam epitaxy. Strain distribution and Brillouin zone folding effects have a large influence on the band structure. Photoluminescence from strain-symmetrized Si6Ge4 superlattices shows the first evidence for the achievement of a quasi-direct fundamental energy gap. Raman spectroscopy is used as a versatile tool to characterize short-period SiGe superlattices.

AB - High quality SiGe strained layer superlattices can be achieved by low temperature molecular beam epitaxy. Strain distribution and Brillouin zone folding effects have a large influence on the band structure. Photoluminescence from strain-symmetrized Si6Ge4 superlattices shows the first evidence for the achievement of a quasi-direct fundamental energy gap. Raman spectroscopy is used as a versatile tool to characterize short-period SiGe superlattices.

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U2 - 10.1016/0040-6090(89)90423-9

DO - 10.1016/0040-6090(89)90423-9

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VL - 183

SP - 1

EP - 8

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

SiGe strained layer superlattices

Abstract

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