SiGe quantum wells on (110) Si grown by molecular beam epitaxy

Keyphrases

• Si(111) 100%
• Molecular Beam Epitaxy 100%
• SiGe Quantum Well 100%
• SiGe 66%
• Luminescence 66%
• Quantum Well 66%
• Well Width 66%
• Band Gap 33%
• Relative Intensity 33%
• Photoluminescence 33%
• Si Substrate 33%
• Heterostructure 33%
• Phonons 33%
• Growth Temperature 33%
• (001) Surface 33%
• Optical Quality 33%
• Luminescence Intensity 33%
• Ge Content 33%
• Exciton Luminescence 33%
• (110) Quantum Wells 33%
• Phonon Replicas 33%

Physics

• Quantum Wells 100%
• Molecular Beam Epitaxy 100%
• Phonon 33%
• Energy Gaps (Solid State) 16%
• Red Shift 16%
• Heterojunctions 16%
• Photoluminescence 16%