Semiconductor properties of passive films on Zn, ZnCo, and ZnNi substrates and ZnO single crystals

J. R. Vilche; K. Jüttner; W. J. Lorenz; W. Kautek; W. Paatsch; M. H. Dean; U. Stimming

doi:10.1016/0010-938X(90)90180-D

Semiconductor properties of passive films on Zn, ZnCo, and ZnNi substrates and ZnO single crystals

J. R. Vilche, K. Jüttner, W. J. Lorenz, W. Kautek, W. Paatsch, M. H. Dean, U. Stimming

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The semiconductor properties of passive films formed in alkaline aqueous solutions of Zn, ZnCo, ZnNi substrates and ZnO single crystals, were studied by electrochemical and photoelectrochemical methods. The substrate doping with Co and Ni leads to a homogeneous distribution of these elements in the passive oxide layer. The density and energy distribution of shallow donor states were determined from deviations of the ideal Mott-Schottky behaviour observed by electrochemical impedance measurements and from optical quantum efficiency experiments. The flat band potentials were found to be practically the same measured on passive oxide layers on zinc substrates and on ZnO single crystal electrodes showing a typical Nernstian pH-dependence. The doping elements Co and Ni seem to generate deep donor levels as indicated by impedance measurements.

Original language	English
Pages (from-to)	679-684
Number of pages	6
Journal	Corrosion Science
Volume	31
Issue number	C
DOIs	https://doi.org/10.1016/0010-938X(90)90180-D
State	Published - 1990
Externally published	Yes

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title = "Semiconductor properties of passive films on Zn, ZnCo, and ZnNi substrates and ZnO single crystals",

abstract = "The semiconductor properties of passive films formed in alkaline aqueous solutions of Zn, ZnCo, ZnNi substrates and ZnO single crystals, were studied by electrochemical and photoelectrochemical methods. The substrate doping with Co and Ni leads to a homogeneous distribution of these elements in the passive oxide layer. The density and energy distribution of shallow donor states were determined from deviations of the ideal Mott-Schottky behaviour observed by electrochemical impedance measurements and from optical quantum efficiency experiments. The flat band potentials were found to be practically the same measured on passive oxide layers on zinc substrates and on ZnO single crystal electrodes showing a typical Nernstian pH-dependence. The doping elements Co and Ni seem to generate deep donor levels as indicated by impedance measurements.",

author = "Vilche, {J. R.} and K. J{\"u}ttner and Lorenz, {W. J.} and W. Kautek and W. Paatsch and Dean, {M. H.} and U. Stimming",

year = "1990",

doi = "10.1016/0010-938X(90)90180-D",

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volume = "31",

pages = "679--684",

journal = "Corrosion Science",

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T1 - Semiconductor properties of passive films on Zn, ZnCo, and ZnNi substrates and ZnO single crystals

AU - Vilche, J. R.

AU - Jüttner, K.

AU - Lorenz, W. J.

AU - Kautek, W.

AU - Paatsch, W.

AU - Dean, M. H.

AU - Stimming, U.

PY - 1990

Y1 - 1990

N2 - The semiconductor properties of passive films formed in alkaline aqueous solutions of Zn, ZnCo, ZnNi substrates and ZnO single crystals, were studied by electrochemical and photoelectrochemical methods. The substrate doping with Co and Ni leads to a homogeneous distribution of these elements in the passive oxide layer. The density and energy distribution of shallow donor states were determined from deviations of the ideal Mott-Schottky behaviour observed by electrochemical impedance measurements and from optical quantum efficiency experiments. The flat band potentials were found to be practically the same measured on passive oxide layers on zinc substrates and on ZnO single crystal electrodes showing a typical Nernstian pH-dependence. The doping elements Co and Ni seem to generate deep donor levels as indicated by impedance measurements.

AB - The semiconductor properties of passive films formed in alkaline aqueous solutions of Zn, ZnCo, ZnNi substrates and ZnO single crystals, were studied by electrochemical and photoelectrochemical methods. The substrate doping with Co and Ni leads to a homogeneous distribution of these elements in the passive oxide layer. The density and energy distribution of shallow donor states were determined from deviations of the ideal Mott-Schottky behaviour observed by electrochemical impedance measurements and from optical quantum efficiency experiments. The flat band potentials were found to be practically the same measured on passive oxide layers on zinc substrates and on ZnO single crystal electrodes showing a typical Nernstian pH-dependence. The doping elements Co and Ni seem to generate deep donor levels as indicated by impedance measurements.

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U2 - 10.1016/0010-938X(90)90180-D

DO - 10.1016/0010-938X(90)90180-D

M3 - Article

AN - SCOPUS:0025684140

SN - 0010-938X

VL - 31

SP - 679

EP - 684

JO - Corrosion Science

JF - Corrosion Science

IS - C

ER -

Semiconductor properties of passive films on Zn, ZnCo, and ZnNi substrates and ZnO single crystals

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