Abstract
The basic concept of semiconductor heterostructures and superlattices and their potential applications for electronic and electrooptic devices are reviewed. The properties of lattice-matched systems are explained with reference to the most widely studied system GaAs-Al//xGa//1// minus //xAs. Strained-layer heterostructures and superlattices are also discussed. The built-in strain in Si-Ge structures significantly influences the band gap of these materials. The versatility of multilayer structures in band structure engineering is demonstrated.
| Translated title of the contribution | Semiconductor Heterostructures. |
|---|---|
| Original language | German |
| Pages (from-to) | 312-318 |
| Number of pages | 7 |
| Journal | Siemens Forschungs- und Entwicklungsberichte/Siemens Research and Development Reports |
| Volume | 15 |
| Issue number | 6 |
| State | Published - 1986 |