Self-Heating Effects from Transistors to Gates

Victor M. Van Santen; Linda Schillinger; Hussam Amrouch

doi:10.1109/VLSI-DAT52063.2021.9427356

Self-Heating Effects from Transistors to Gates

Victor M. Van Santen, Linda Schillinger, Hussam Amrouch

Universität Stuttgart

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

With the introduction of FinFET transistors, the Self-Heating Effect (SHE) became a major reliability challenge. In this work, we present an automated SHE estimation method integrated within a circuit reliability framework. It allows designers to study SHE in analogue and digital circuits. For accurate analysis, we employ electrically and thermally calibrated 14nm FinFET transistor models. To demonstrate the capabilities of our framework, we study SHE in standard cells and report a considerable dependence on the cell topology. We show how SHE can induce 15% delay increase in AND3 logic gate, highlighting the importance of taking SHE into account. Otherwise, reliability cannot be sustained during the circuit's operation.

Original language	English
Title of host publication	2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665419154
DOIs	https://doi.org/10.1109/VLSI-DAT52063.2021.9427356
State	Published - 19 Apr 2021
Externally published	Yes
Event	2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Hsinchu, Taiwan, Province of China Duration: 19 Apr 2021 → 22 Apr 2021

Publication series

Name	2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings

Conference

Conference	2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	19/04/21 → 22/04/21

Keywords

Circuits
FinFET
Reliability
Self-Heating

Access to Document

10.1109/VLSI-DAT52063.2021.9427356

Cite this

Van Santen, V. M., Schillinger, L., & Amrouch, H. (2021). Self-Heating Effects from Transistors to Gates. In 2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings Article 9427356 (2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-DAT52063.2021.9427356

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title = "Self-Heating Effects from Transistors to Gates",

abstract = "With the introduction of FinFET transistors, the Self-Heating Effect (SHE) became a major reliability challenge. In this work, we present an automated SHE estimation method integrated within a circuit reliability framework. It allows designers to study SHE in analogue and digital circuits. For accurate analysis, we employ electrically and thermally calibrated 14nm FinFET transistor models. To demonstrate the capabilities of our framework, we study SHE in standard cells and report a considerable dependence on the cell topology. We show how SHE can induce 15% delay increase in AND3 logic gate, highlighting the importance of taking SHE into account. Otherwise, reliability cannot be sustained during the circuit's operation.",

keywords = "Circuits, FinFET, Reliability, Self-Heating",

author = "{Van Santen}, {Victor M.} and Linda Schillinger and Hussam Amrouch",

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year = "2021",

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Van Santen, VM, Schillinger, L & Amrouch, H 2021, Self-Heating Effects from Transistors to Gates. in 2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings., 9427356, 2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021, Hsinchu, Taiwan, Province of China, 19/04/21. https://doi.org/10.1109/VLSI-DAT52063.2021.9427356

Self-Heating Effects from Transistors to Gates. / Van Santen, Victor M.; Schillinger, Linda; Amrouch, Hussam.
2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. 9427356 (2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - With the introduction of FinFET transistors, the Self-Heating Effect (SHE) became a major reliability challenge. In this work, we present an automated SHE estimation method integrated within a circuit reliability framework. It allows designers to study SHE in analogue and digital circuits. For accurate analysis, we employ electrically and thermally calibrated 14nm FinFET transistor models. To demonstrate the capabilities of our framework, we study SHE in standard cells and report a considerable dependence on the cell topology. We show how SHE can induce 15% delay increase in AND3 logic gate, highlighting the importance of taking SHE into account. Otherwise, reliability cannot be sustained during the circuit's operation.

AB - With the introduction of FinFET transistors, the Self-Heating Effect (SHE) became a major reliability challenge. In this work, we present an automated SHE estimation method integrated within a circuit reliability framework. It allows designers to study SHE in analogue and digital circuits. For accurate analysis, we employ electrically and thermally calibrated 14nm FinFET transistor models. To demonstrate the capabilities of our framework, we study SHE in standard cells and report a considerable dependence on the cell topology. We show how SHE can induce 15% delay increase in AND3 logic gate, highlighting the importance of taking SHE into account. Otherwise, reliability cannot be sustained during the circuit's operation.

KW - Circuits

KW - FinFET

KW - Reliability

KW - Self-Heating

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M3 - Conference contribution

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BT - 2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

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Van Santen VM, Schillinger L, Amrouch H. Self-Heating Effects from Transistors to Gates. In 2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. 9427356. (2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings). doi: 10.1109/VLSI-DAT52063.2021.9427356

Self-Heating Effects from Transistors to Gates

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