TY - JOUR
T1 - Self-assembled Si/Ge quantum dot structures for novel device applications
AU - Brunner, K.
AU - Bougeard, D.
AU - Janotta, A.
AU - Herbst, M.
AU - Tan, P. H.
AU - Riedl, H.
AU - Stutzmann, M.
AU - Abstreiter, G.
PY - 2003
Y1 - 2003
N2 - The band structure of self-assembled Si/Ge quantum dot structures deposited by molecular beam epitaxy in the Stranski Krastanov growth mode is characterized by optical and electrical spectroscopy. Interband and intraband absorption, photocurrent, photoluminescence, Raman and admittance spectroscopy of structures with quantum dots of about 20 nm lateral size offer insight into the discrete level scheme within the valence band, the optical transitions and the lifetime of localized hole states. The results are discussed with respect to their possible applications in infrared light detection, storage and quantum-logic devices.
AB - The band structure of self-assembled Si/Ge quantum dot structures deposited by molecular beam epitaxy in the Stranski Krastanov growth mode is characterized by optical and electrical spectroscopy. Interband and intraband absorption, photocurrent, photoluminescence, Raman and admittance spectroscopy of structures with quantum dots of about 20 nm lateral size offer insight into the discrete level scheme within the valence band, the optical transitions and the lifetime of localized hole states. The results are discussed with respect to their possible applications in infrared light detection, storage and quantum-logic devices.
UR - http://www.scopus.com/inward/record.url?scp=0038488118&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0038488118
SN - 0272-9172
VL - 737
SP - 309
EP - 319
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Quantum Confined Semiconductor Nanostructures
Y2 - 2 December 2002 through 5 December 2002
ER -