Self-assembled growth of Sn on Ge (001)

W. Dondl; P. Schittenhelm; G. Abstreiter

doi:10.1016/S0040-6090(96)09219-X

Self-assembled growth of Sn on Ge (001)

W. Dondl, P. Schittenhelm, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The growth of Sn layers on Ge (001) surfaces was studied with respect to the formation of Stranski-Krastanov islands due to the large lattice mismatch. Atomic force microscopy shows the transition to Stranski-Krastanov growth at an Sn coverage of 2.33 atomic monolayers on the surface. The high Sn segregation causes crystalline defects by overgrowing the Sn islands. Using Sb as a surfactant, it is possible to suppress the Stranski-Krastanov growth.

Original language	English
Pages (from-to)	308-310
Number of pages	3
Journal	Thin Solid Films
Volume	294
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)09219-X
State	Published - 15 Feb 1997

Keywords

Germanium
Self-assembled growth
Tin

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10.1016/S0040-6090(96)09219-X

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abstract = "The growth of Sn layers on Ge (001) surfaces was studied with respect to the formation of Stranski-Krastanov islands due to the large lattice mismatch. Atomic force microscopy shows the transition to Stranski-Krastanov growth at an Sn coverage of 2.33 atomic monolayers on the surface. The high Sn segregation causes crystalline defects by overgrowing the Sn islands. Using Sb as a surfactant, it is possible to suppress the Stranski-Krastanov growth.",

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T1 - Self-assembled growth of Sn on Ge (001)

AU - Dondl, W.

AU - Schittenhelm, P.

AU - Abstreiter, G.

PY - 1997/2/15

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N2 - The growth of Sn layers on Ge (001) surfaces was studied with respect to the formation of Stranski-Krastanov islands due to the large lattice mismatch. Atomic force microscopy shows the transition to Stranski-Krastanov growth at an Sn coverage of 2.33 atomic monolayers on the surface. The high Sn segregation causes crystalline defects by overgrowing the Sn islands. Using Sb as a surfactant, it is possible to suppress the Stranski-Krastanov growth.

AB - The growth of Sn layers on Ge (001) surfaces was studied with respect to the formation of Stranski-Krastanov islands due to the large lattice mismatch. Atomic force microscopy shows the transition to Stranski-Krastanov growth at an Sn coverage of 2.33 atomic monolayers on the surface. The high Sn segregation causes crystalline defects by overgrowing the Sn islands. Using Sb as a surfactant, it is possible to suppress the Stranski-Krastanov growth.

KW - Germanium

KW - Self-assembled growth

KW - Tin

UR - http://www.scopus.com/inward/record.url?scp=0031074060&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(96)09219-X

DO - 10.1016/S0040-6090(96)09219-X

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VL - 294

SP - 308

EP - 310

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Self-assembled growth of Sn on Ge (001)

Abstract

Keywords

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