Self-assembled Ge dots: Growth, characterization, ordering, and applications

P. Schittenhelm, C. Engel, F. Findeis, G. Abstreiter, A. A. Darhuber, G. Bauer, A. O. Kosogov, P. Werner

Research output: Contribution to journalArticlepeer-review

78 Scopus citations

Abstract

The Stranski-Krastanow growth mode, which leads to the self-assembled formation of dots, allows one to exceed the critical thickness without introducing dislocations. We report the coverage limits for the dislocation-free dot regime in dependence of the Ge content, and also the composition dependent thickness of the two-dimensional wetting layer. To reduce the size inhomogeneity of the self-assembled dots, we investigated ordering effects in Si/Ge-dot multilayers. The experiments do not only reveal a strong vertical ordering of the dots, but also a lateral correlation and a significantly increased size homogeneity is observed. Results on first device structures, a npn-infrared detector and a silicon based tunneling structure, both with embedded layers of self-assembled Ge dots, are presented.

Original languageEnglish
Pages (from-to)1575-1581
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number3
DOIs
StatePublished - 1998

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