TY - JOUR
T1 - Self-assembled Ge dots
T2 - Growth, characterization, ordering, and applications
AU - Schittenhelm, P.
AU - Engel, C.
AU - Findeis, F.
AU - Abstreiter, G.
AU - Darhuber, A. A.
AU - Bauer, G.
AU - Kosogov, A. O.
AU - Werner, P.
PY - 1998
Y1 - 1998
N2 - The Stranski-Krastanow growth mode, which leads to the self-assembled formation of dots, allows one to exceed the critical thickness without introducing dislocations. We report the coverage limits for the dislocation-free dot regime in dependence of the Ge content, and also the composition dependent thickness of the two-dimensional wetting layer. To reduce the size inhomogeneity of the self-assembled dots, we investigated ordering effects in Si/Ge-dot multilayers. The experiments do not only reveal a strong vertical ordering of the dots, but also a lateral correlation and a significantly increased size homogeneity is observed. Results on first device structures, a npn-infrared detector and a silicon based tunneling structure, both with embedded layers of self-assembled Ge dots, are presented.
AB - The Stranski-Krastanow growth mode, which leads to the self-assembled formation of dots, allows one to exceed the critical thickness without introducing dislocations. We report the coverage limits for the dislocation-free dot regime in dependence of the Ge content, and also the composition dependent thickness of the two-dimensional wetting layer. To reduce the size inhomogeneity of the self-assembled dots, we investigated ordering effects in Si/Ge-dot multilayers. The experiments do not only reveal a strong vertical ordering of the dots, but also a lateral correlation and a significantly increased size homogeneity is observed. Results on first device structures, a npn-infrared detector and a silicon based tunneling structure, both with embedded layers of self-assembled Ge dots, are presented.
UR - http://www.scopus.com/inward/record.url?scp=0343143295&partnerID=8YFLogxK
U2 - 10.1116/1.589942
DO - 10.1116/1.589942
M3 - Article
AN - SCOPUS:0343143295
SN - 1071-1023
VL - 16
SP - 1575
EP - 1581
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 3
ER -