Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

Muhammed Ihab Schukfeh; Allan Hansen; Marc Tornow; Kristian Storm; Kimberly Dick Thelander; Claes Thelander; Lars Samuelson; Peter Hinze; Thomas Weimann; Nelia Wanderka

doi:10.1109/NANO.2015.7388924

Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

Muhammed Ihab Schukfeh, Allan Hansen, Marc Tornow, Kristian Storm, Kimberly Dick Thelander, Claes Thelander, Lars Samuelson, Peter Hinze, Thomas Weimann, Nelia Wanderka

Associate Professorship of Molekularelektronik

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1489-1492
Number of pages	4
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388924
State	Published - 2015
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 27 Jul 2015 → 30 Jul 2015

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	27/07/15 → 30/07/15

Keywords

InAs/InP
heterostructure nanowire
nanogap electrodes
selective etching

Access to Document

10.1109/NANO.2015.7388924

Cite this

Schukfeh, M. I., Hansen, A., Tornow, M., Storm, K., Thelander, K. D., Thelander, C., Samuelson, L., Hinze, P., Weimann, T., & Wanderka, N. (2015). Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 1489-1492). Article 7388924 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388924

@inproceedings{a33a1832e0c842f2b6c6169189eaee39,

title = "Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps",

abstract = "We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.",

keywords = "InAs/InP, heterostructure nanowire, nanogap electrodes, selective etching",

author = "Schukfeh, {Muhammed Ihab} and Allan Hansen and Marc Tornow and Kristian Storm and Thelander, {Kimberly Dick} and Claes Thelander and Lars Samuelson and Peter Hinze and Thomas Weimann and Nelia Wanderka",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",

year = "2015",

doi = "10.1109/NANO.2015.7388924",

language = "English",

series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1489--1492",

booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

}

Schukfeh, MI, Hansen, A, Tornow, M, Storm, K, Thelander, KD, Thelander, C, Samuelson, L, Hinze, P, Weimann, T & Wanderka, N 2015, Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388924, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 1489-1492, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 27/07/15. https://doi.org/10.1109/NANO.2015.7388924

Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps. / Schukfeh, Muhammed Ihab; Hansen, Allan; Tornow, Marc et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1489-1492 7388924 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

AU - Schukfeh, Muhammed Ihab

AU - Hansen, Allan

AU - Tornow, Marc

AU - Storm, Kristian

AU - Thelander, Kimberly Dick

AU - Thelander, Claes

AU - Samuelson, Lars

AU - Hinze, Peter

AU - Weimann, Thomas

AU - Wanderka, Nelia

PY - 2015

Y1 - 2015

N2 - We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.

AB - We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.

KW - InAs/InP

KW - heterostructure nanowire

KW - nanogap electrodes

KW - selective etching

UR - http://www.scopus.com/inward/record.url?scp=84964389237&partnerID=8YFLogxK

U2 - 10.1109/NANO.2015.7388924

DO - 10.1109/NANO.2015.7388924

M3 - Conference contribution

AN - SCOPUS:84964389237

T3 - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

SP - 1489

EP - 1492

BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

Y2 - 27 July 2015 through 30 July 2015

ER -

Schukfeh MI, Hansen A, Tornow M, Storm K, Thelander KD, Thelander C et al. Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1489-1492. 7388924. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). doi: 10.1109/NANO.2015.7388924

Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

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