Segregation of zinc in ingaas/inp heterostructures during diffusion: Experiment and numerical modeling

F. Dildey, M. C. Amann, R. Treichler

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Zn diffusions from spin-on films were performed into InP/InGaAs/InP heterostructures suited for fabrication of heterojunction bipolar transistors. A strong segregation occurred at the InGaAs/InP heterojunctions enriching the Zn concentration in InGaAs by about an order of magnitude. From the Zn concentration profiles the relevant diffusion and segregation parameters were determined. Using these data an accurate numerical modeling and improved process control of the Zn diffusion into InGaAs/InP multilayer heterostructures can be achieved.

Original languageEnglish
Pages (from-to)810-812
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume29
Issue number5 R
DOIs
StatePublished - May 1990
Externally publishedYes

Keywords

  • Heterojunction bipolar transistors
  • Lngaas/lnP heterostructures
  • MOVPE
  • Planar
  • Segregation
  • Technology
  • Zn diffusion

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