Abstract
Segregation is a kinetic growth effect causing intermixing of atoms at interfaces in semiconductor heterostructures. Quantitative measurements of segregation efficiencies with their dependence upon growth parameters and growth techniques are important to minimize segregation. Here we report on a variety of quantum well samples such as InGaAs/GaAs grown by molecular beam epitaxy and metal organic vapor phase epitaxy. The structures were analyzed by high-resolution transmission electron microscopy and composition profiles are determined on a near atomic scale. Applying the model of Muraki et al (1992), segregation efficiencies can be obtained on the basis of measured composition profiles.
| Original language | English |
|---|---|
| Pages (from-to) | 127-130 |
| Number of pages | 4 |
| Journal | Design and Nature |
| Volume | 6 |
| State | Published - 2004 |
| Event | Design and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece Duration: 28 Jun 2004 → 30 Jun 2004 |