Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy

M. Schowalter; M. Melzer; A. Rosenauer; D. Gerthsen; R. Krebs; J. P. Reithmaier; A. Forchel; M. Arzberger; M. Bichler; G. Abstreiter; M. Grau; M. C. Amann; R. Sellin; D. Bimberg

doi:10.1201/9781351074636

Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy

M. Schowalter, M. Melzer, A. Rosenauer, D. Gerthsen, R. Krebs, J. P. Reithmaier, A. Forchel, M. Arzberger, M. Bichler, G. Abstreiter, M. Grau, M. C. Amann, R. Sellin, D. Bimberg

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

Segregation is a kinetic growth effect causing intermixing of atoms at interfaces in semiconductor heterostructures. Quantitative measurements of segregation efficiencies with their dependence upon growth parameters and growth techniques are important to minimize segregation. Here we report on a variety of quantum well samples such as InGaAs/GaAs grown by molecular beam epitaxy and metal organic vapor phase epitaxy. The structures were analyzed by high-resolution transmission electron microscopy and composition profiles are determined on a near atomic scale. Applying the model of Muraki et al (1992), segregation efficiencies can be obtained on the basis of measured composition profiles.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials 2003
Publisher	CRC Press
Pages	127-130
Number of pages	4
ISBN (Electronic)	9781351083089
ISBN (Print)	0750309792, 9781315895536
DOIs	https://doi.org/10.1201/9781351074636
State	Published - 1 Jan 2018

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Schowalter, M., Melzer, M., Rosenauer, A., Gerthsen, D., Krebs, R., Reithmaier, J. P., Forchel, A., Arzberger, M., Bichler, M., Abstreiter, G., Grau, M., Amann, M. C., Sellin, R., & Bimberg, D. (2018). Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy. In Microscopy of Semiconducting Materials 2003 (pp. 127-130). CRC Press. https://doi.org/10.1201/9781351074636

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abstract = "Segregation is a kinetic growth effect causing intermixing of atoms at interfaces in semiconductor heterostructures. Quantitative measurements of segregation efficiencies with their dependence upon growth parameters and growth techniques are important to minimize segregation. Here we report on a variety of quantum well samples such as InGaAs/GaAs grown by molecular beam epitaxy and metal organic vapor phase epitaxy. The structures were analyzed by high-resolution transmission electron microscopy and composition profiles are determined on a near atomic scale. Applying the model of Muraki et al (1992), segregation efficiencies can be obtained on the basis of measured composition profiles.",

author = "M. Schowalter and M. Melzer and A. Rosenauer and D. Gerthsen and R. Krebs and Reithmaier, {J. P.} and A. Forchel and M. Arzberger and M. Bichler and G. Abstreiter and M. Grau and Amann, {M. C.} and R. Sellin and D. Bimberg",

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doi = "10.1201/9781351074636",

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Schowalter, M, Melzer, M, Rosenauer, A, Gerthsen, D, Krebs, R, Reithmaier, JP, Forchel, A, Arzberger, M, Bichler, M, Abstreiter, G, Grau, M, Amann, MC, Sellin, R & Bimberg, D 2018, Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy. in Microscopy of Semiconducting Materials 2003. CRC Press, pp. 127-130. https://doi.org/10.1201/9781351074636

TY - CHAP

T1 - Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy

AU - Schowalter, M.

AU - Melzer, M.

AU - Rosenauer, A.

AU - Gerthsen, D.

AU - Krebs, R.

AU - Reithmaier, J. P.

AU - Forchel, A.

AU - Arzberger, M.

AU - Bichler, M.

AU - Abstreiter, G.

AU - Grau, M.

AU - Amann, M. C.

AU - Sellin, R.

AU - Bimberg, D.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Segregation is a kinetic growth effect causing intermixing of atoms at interfaces in semiconductor heterostructures. Quantitative measurements of segregation efficiencies with their dependence upon growth parameters and growth techniques are important to minimize segregation. Here we report on a variety of quantum well samples such as InGaAs/GaAs grown by molecular beam epitaxy and metal organic vapor phase epitaxy. The structures were analyzed by high-resolution transmission electron microscopy and composition profiles are determined on a near atomic scale. Applying the model of Muraki et al (1992), segregation efficiencies can be obtained on the basis of measured composition profiles.

AB - Segregation is a kinetic growth effect causing intermixing of atoms at interfaces in semiconductor heterostructures. Quantitative measurements of segregation efficiencies with their dependence upon growth parameters and growth techniques are important to minimize segregation. Here we report on a variety of quantum well samples such as InGaAs/GaAs grown by molecular beam epitaxy and metal organic vapor phase epitaxy. The structures were analyzed by high-resolution transmission electron microscopy and composition profiles are determined on a near atomic scale. Applying the model of Muraki et al (1992), segregation efficiencies can be obtained on the basis of measured composition profiles.

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DO - 10.1201/9781351074636

M3 - Chapter

AN - SCOPUS:85053337716

SN - 0750309792

SN - 9781315895536

SP - 127

EP - 130

BT - Microscopy of Semiconducting Materials 2003

PB - CRC Press

ER -

Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy

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