Abstract
The surface segregation of phosphorus, antimony, and boron in Si molecular-beam epitaxy is investigated experimentally at low temperatures. Rate and temperature dependent measurements are explained by a segregation model, which connects surface segregation with surface diffusion. The model is found to explain quantitatively many available data of segregation on different semiconductor surfaces, explicitly: Si, Ge, and GaAs.
| Original language | English |
|---|---|
| Pages (from-to) | 13551-13558 |
| Number of pages | 8 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 53 |
| Issue number | 20 |
| DOIs | |
| State | Published - 1996 |
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