TY - JOUR
T1 - Segregation and diffusion on semiconductor surfaces
AU - Nützel, J.
AU - Abstreiter, G.
PY - 1996
Y1 - 1996
N2 - The surface segregation of phosphorus, antimony, and boron in Si molecular-beam epitaxy is investigated experimentally at low temperatures. Rate and temperature dependent measurements are explained by a segregation model, which connects surface segregation with surface diffusion. The model is found to explain quantitatively many available data of segregation on different semiconductor surfaces, explicitly: Si, Ge, and GaAs.
AB - The surface segregation of phosphorus, antimony, and boron in Si molecular-beam epitaxy is investigated experimentally at low temperatures. Rate and temperature dependent measurements are explained by a segregation model, which connects surface segregation with surface diffusion. The model is found to explain quantitatively many available data of segregation on different semiconductor surfaces, explicitly: Si, Ge, and GaAs.
UR - http://www.scopus.com/inward/record.url?scp=0343793808&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.53.13551
DO - 10.1103/PhysRevB.53.13551
M3 - Article
AN - SCOPUS:0343793808
SN - 1098-0121
VL - 53
SP - 13551
EP - 13558
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
ER -