Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells

P. Kruck, M. Seto, M. Helm, Z. Moussa, P. Boucaud, F. H. Julien, J. M. Lourtioz, J. F. Nützel, G. Abstreiter

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Abstract

The observation of second-harmonic generation in compositionally stepped p-type Si/SiGe multiple quantum wells is reported. The second-order nonlinear susceptibility arises from the asymmetry of the potential for the holes in the SiGe valence band. The structure is pumped with a Q-switched CO2 laser operating at 10.6 μm with a peak power of 2 kW and yields a frequency-doubled signal of some 10 microwatts from only 15 SiGe quantum wells. The observed signal is caused by the (zzz) component of the nonlinear susceptibility. We show that the (xyz) component is suppressed in the waveguide geometry employed.

Original languageEnglish
Pages (from-to)763-766
Number of pages4
JournalSolid-State Electronics
Volume40
Issue number1-8
DOIs
StatePublished - 1996

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