Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells

P. Kruck; M. Seto; M. Helm; Z. Moussa; P. Boucaud; F. H. Julien; J. M. Lourtioz; J. F. Nützel; G. Abstreiter

doi:10.1016/0038-1101(95)00360-6

Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells

P. Kruck, M. Seto, M. Helm, Z. Moussa, P. Boucaud, F. H. Julien, J. M. Lourtioz, J. F. Nützel, G. Abstreiter

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The observation of second-harmonic generation in compositionally stepped p-type Si/SiGe multiple quantum wells is reported. The second-order nonlinear susceptibility arises from the asymmetry of the potential for the holes in the SiGe valence band. The structure is pumped with a Q-switched CO₂ laser operating at 10.6 μm with a peak power of 2 kW and yields a frequency-doubled signal of some 10 microwatts from only 15 SiGe quantum wells. The observed signal is caused by the (zzz) component of the nonlinear susceptibility. We show that the (xyz) component is suppressed in the waveguide geometry employed.

Original language	English
Pages (from-to)	763-766
Number of pages	4
Journal	Solid-State Electronics
Volume	40
Issue number	1-8
DOIs	https://doi.org/10.1016/0038-1101(95)00360-6
State	Published - 1996

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title = "Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells",

abstract = "The observation of second-harmonic generation in compositionally stepped p-type Si/SiGe multiple quantum wells is reported. The second-order nonlinear susceptibility arises from the asymmetry of the potential for the holes in the SiGe valence band. The structure is pumped with a Q-switched CO2 laser operating at 10.6 μm with a peak power of 2 kW and yields a frequency-doubled signal of some 10 microwatts from only 15 SiGe quantum wells. The observed signal is caused by the (zzz) component of the nonlinear susceptibility. We show that the (xyz) component is suppressed in the waveguide geometry employed.",

author = "P. Kruck and M. Seto and M. Helm and Z. Moussa and P. Boucaud and Julien, {F. H.} and Lourtioz, {J. M.} and N{\"u}tzel, {J. F.} and G. Abstreiter",

year = "1996",

doi = "10.1016/0038-1101(95)00360-6",

language = "English",

volume = "40",

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journal = "Solid-State Electronics",

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T1 - Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells

AU - Kruck, P.

AU - Seto, M.

AU - Helm, M.

AU - Moussa, Z.

AU - Boucaud, P.

AU - Julien, F. H.

AU - Lourtioz, J. M.

AU - Nützel, J. F.

AU - Abstreiter, G.

PY - 1996

Y1 - 1996

N2 - The observation of second-harmonic generation in compositionally stepped p-type Si/SiGe multiple quantum wells is reported. The second-order nonlinear susceptibility arises from the asymmetry of the potential for the holes in the SiGe valence band. The structure is pumped with a Q-switched CO2 laser operating at 10.6 μm with a peak power of 2 kW and yields a frequency-doubled signal of some 10 microwatts from only 15 SiGe quantum wells. The observed signal is caused by the (zzz) component of the nonlinear susceptibility. We show that the (xyz) component is suppressed in the waveguide geometry employed.

AB - The observation of second-harmonic generation in compositionally stepped p-type Si/SiGe multiple quantum wells is reported. The second-order nonlinear susceptibility arises from the asymmetry of the potential for the holes in the SiGe valence band. The structure is pumped with a Q-switched CO2 laser operating at 10.6 μm with a peak power of 2 kW and yields a frequency-doubled signal of some 10 microwatts from only 15 SiGe quantum wells. The observed signal is caused by the (zzz) component of the nonlinear susceptibility. We show that the (xyz) component is suppressed in the waveguide geometry employed.

UR - http://www.scopus.com/inward/record.url?scp=0029718823&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(95)00360-6

DO - 10.1016/0038-1101(95)00360-6

M3 - Article

AN - SCOPUS:0029718823

SN - 0038-1101

VL - 40

SP - 763

EP - 766

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1-8

ER -

Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells

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