Second-harmonic generation in asymmetric Si/SiGe quantum wells

M. Seto; M. Helm; Z. Moussa; P. Boucaud; F. H. Julien; J. M. Lourtioz; J. F. Nützel; G. Abstreiter

doi:10.1063/1.113028

Second-harmonic generation in asymmetric Si/SiGe quantum wells

M. Seto, M. Helm, Z. Moussa, P. Boucaud, F. H. Julien, J. M. Lourtioz, J. F. Nützel, G. Abstreiter

TUM Emeriti of Excellence

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Abstract

The observation of infrared second-harmonic generation in asymmetric Si/SiGe p-doped quantum wells is reported. The generated signal stems entirely from valence intersubband transitions, since bulk Si, with an inversion symmetric crystal structure, has a zero second-order susceptibility. The experiments were performed using a Q-switched CO₂ laser operating at 10.56 μm and give a nonlinear susceptibility of 5×10^-8 m/V.

Original language	English
Pages (from-to)	2969-2971
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	23
DOIs	https://doi.org/10.1063/1.113028
State	Published - 1994

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10.1063/1.113028

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title = "Second-harmonic generation in asymmetric Si/SiGe quantum wells",

abstract = "The observation of infrared second-harmonic generation in asymmetric Si/SiGe p-doped quantum wells is reported. The generated signal stems entirely from valence intersubband transitions, since bulk Si, with an inversion symmetric crystal structure, has a zero second-order susceptibility. The experiments were performed using a Q-switched CO2 laser operating at 10.56 μm and give a nonlinear susceptibility of 5×10-8 m/V.",

author = "M. Seto and M. Helm and Z. Moussa and P. Boucaud and Julien, {F. H.} and Lourtioz, {J. M.} and N{\"u}tzel, {J. F.} and G. Abstreiter",

year = "1994",

doi = "10.1063/1.113028",

language = "English",

volume = "65",

pages = "2969--2971",

journal = "Applied Physics Letters",

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T1 - Second-harmonic generation in asymmetric Si/SiGe quantum wells

AU - Seto, M.

AU - Helm, M.

AU - Moussa, Z.

AU - Boucaud, P.

AU - Julien, F. H.

AU - Lourtioz, J. M.

AU - Nützel, J. F.

AU - Abstreiter, G.

PY - 1994

Y1 - 1994

N2 - The observation of infrared second-harmonic generation in asymmetric Si/SiGe p-doped quantum wells is reported. The generated signal stems entirely from valence intersubband transitions, since bulk Si, with an inversion symmetric crystal structure, has a zero second-order susceptibility. The experiments were performed using a Q-switched CO2 laser operating at 10.56 μm and give a nonlinear susceptibility of 5×10-8 m/V.

AB - The observation of infrared second-harmonic generation in asymmetric Si/SiGe p-doped quantum wells is reported. The generated signal stems entirely from valence intersubband transitions, since bulk Si, with an inversion symmetric crystal structure, has a zero second-order susceptibility. The experiments were performed using a Q-switched CO2 laser operating at 10.56 μm and give a nonlinear susceptibility of 5×10-8 m/V.

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U2 - 10.1063/1.113028

DO - 10.1063/1.113028

M3 - Article

AN - SCOPUS:0001512841

SN - 0003-6951

VL - 65

SP - 2969

EP - 2971

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Second-harmonic generation in asymmetric Si/SiGe quantum wells

Abstract

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