TY - JOUR
T1 - Sampled grating tunable twin-guide laser diodes with wide tuning range (≥40 nm) and large output power (≥ 10 mW)
AU - Todt, R.
AU - Jacke, T.
AU - Meyer, R.
AU - Adler, J.
AU - Laroy, R.
AU - Morthier, G.
AU - Amann, M. C.
PY - 2006
Y1 - 2006
N2 - The sampled grating tunable twin-guide (SG-TTG) laser diode is a DFB-like tunable laser that employs Vernier-effect tuning to achieve wide wavelength tuning. In contrast to most other monolithic widely tunable lasers (which are usually DBR-type lasers), a phase tuning section is not needed and, hence, the SGTTG laser requires at least one tuning current less than comparable devices. The devices provide full wavelength coverage over a 40nm-broad tuning range that is centered at 1.54μm. Its tuning behavior is quasi-continuous with up to 8.2 nm broad continuous tuning regions. High side-mode suppression (SMSR≥35 dB) as well as large output power (P≥10mW) are obtained over the whole wavelength range from 1520.5 to 1561.5 nm.
AB - The sampled grating tunable twin-guide (SG-TTG) laser diode is a DFB-like tunable laser that employs Vernier-effect tuning to achieve wide wavelength tuning. In contrast to most other monolithic widely tunable lasers (which are usually DBR-type lasers), a phase tuning section is not needed and, hence, the SGTTG laser requires at least one tuning current less than comparable devices. The devices provide full wavelength coverage over a 40nm-broad tuning range that is centered at 1.54μm. Its tuning behavior is quasi-continuous with up to 8.2 nm broad continuous tuning regions. High side-mode suppression (SMSR≥35 dB) as well as large output power (P≥10mW) are obtained over the whole wavelength range from 1520.5 to 1561.5 nm.
UR - http://www.scopus.com/inward/record.url?scp=33646186289&partnerID=8YFLogxK
U2 - 10.1002/pssc.200564133
DO - 10.1002/pssc.200564133
M3 - Conference article
AN - SCOPUS:33646186289
SN - 1610-1634
VL - 3
SP - 403
EP - 406
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 3
T2 - 32nd International Symposium on Compound Semiconductors, ISCS-2005
Y2 - 18 September 2005 through 22 September 2005
ER -