Room-temperature operation of index-guided 1.55 μm InP-based vertical-cavity surface-emitting laser

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, M. C. Amann

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

For effective electrical and optical confinement that yields low series resistance, a novel concept for long-wavelength InP-based vertical cavity surface emitting lasers (VCSEL) with a buried tunnel junction is used. VCSELs with aperture diameters of 13 μm exhibit threshold currents of 10 mA, singlemode emission, a quantum efficiency of 10% and a threshold voltage of only 1.2 V.

Original languageEnglish
Pages (from-to)437-439
Number of pages3
JournalElectronics Letters
Volume36
Issue number5
DOIs
StatePublished - 2 Mar 2000

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