Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers

M. Grau; C. Lin; O. Dier; C. Lauer; M. C. Amann

doi:10.1063/1.2140875

Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers

M. Grau, C. Lin, O. Dier, C. Lauer, M. C. Amann

Chair of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

145 Scopus citations

Abstract

Quinternary AlGaInAsSb is introduced as a new barrier material for GaSb-based type-I laser diodes. For wavelengths beyond 3 μm, this material improves the valence-band offset between GaInAsSb quantum wells and barriers as compared to standard GaInAsSbAlGaAsSb structures. The laser structures, which comprise three compressively strained GaInAsSb quantum wells and AlGaInAsSb barriers and waveguides, show good structural and optical quality. 3.26 μm emission has been achieved with ridge waveguide lasers working in pulsed operation up to 50 °C. With this emission wavelength, a strong absorption line of C H4 is accessible for gas absorption measurements.

Original language	English
Article number	241104
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	24
DOIs	https://doi.org/10.1063/1.2140875
State	Published - 2005

Access to Document

10.1063/1.2140875

Cite this

@article{fcaac16e4ba1424b99815f4906416946,

title = "Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers",

abstract = "Quinternary AlGaInAsSb is introduced as a new barrier material for GaSb-based type-I laser diodes. For wavelengths beyond 3 μm, this material improves the valence-band offset between GaInAsSb quantum wells and barriers as compared to standard GaInAsSbAlGaAsSb structures. The laser structures, which comprise three compressively strained GaInAsSb quantum wells and AlGaInAsSb barriers and waveguides, show good structural and optical quality. 3.26 μm emission has been achieved with ridge waveguide lasers working in pulsed operation up to 50 °C. With this emission wavelength, a strong absorption line of C H4 is accessible for gas absorption measurements.",

author = "M. Grau and C. Lin and O. Dier and C. Lauer and Amann, {M. C.}",

year = "2005",

doi = "10.1063/1.2140875",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers

AU - Grau, M.

AU - Lin, C.

AU - Dier, O.

AU - Lauer, C.

AU - Amann, M. C.

PY - 2005

Y1 - 2005

N2 - Quinternary AlGaInAsSb is introduced as a new barrier material for GaSb-based type-I laser diodes. For wavelengths beyond 3 μm, this material improves the valence-band offset between GaInAsSb quantum wells and barriers as compared to standard GaInAsSbAlGaAsSb structures. The laser structures, which comprise three compressively strained GaInAsSb quantum wells and AlGaInAsSb barriers and waveguides, show good structural and optical quality. 3.26 μm emission has been achieved with ridge waveguide lasers working in pulsed operation up to 50 °C. With this emission wavelength, a strong absorption line of C H4 is accessible for gas absorption measurements.

AB - Quinternary AlGaInAsSb is introduced as a new barrier material for GaSb-based type-I laser diodes. For wavelengths beyond 3 μm, this material improves the valence-band offset between GaInAsSb quantum wells and barriers as compared to standard GaInAsSbAlGaAsSb structures. The laser structures, which comprise three compressively strained GaInAsSb quantum wells and AlGaInAsSb barriers and waveguides, show good structural and optical quality. 3.26 μm emission has been achieved with ridge waveguide lasers working in pulsed operation up to 50 °C. With this emission wavelength, a strong absorption line of C H4 is accessible for gas absorption measurements.

UR - http://www.scopus.com/inward/record.url?scp=30344463031&partnerID=8YFLogxK

U2 - 10.1063/1.2140875

DO - 10.1063/1.2140875

M3 - Article

AN - SCOPUS:30344463031

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241104

ER -

Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this