Abstract
We have demonstrated single-step room temperature nanoimprint lithography (RTNIL) using polystyrene (PS, average molecular weights ranging from 13 to 97 kg/mol) as the imprint polymer layer on a silicon substrate for imprinting rectangular line patterns with varying aspect ratios, ranging from 11 to 500 nm wide. To accomplish this demonstration, we designed and built a tool that controllably pressed a mold into a stationary imprint sample applying imprint pressures between 280 and 700 MPa. The molds used in these experiments were GaAs/AlGaAs sandwich structures fabricated by molecular beam epitaxy (MBE) that we cleaved and selectively etched afterward in order to generate 3-D grating structures with nanometer resolution on their edges. We fabricated positive and negative molds comprising single-line as well as multiline patterns with different aspect ratios and linewidths between 9 and 300 nm.
Original language | English |
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Article number | 4445001 |
Pages (from-to) | 363-370 |
Number of pages | 8 |
Journal | IEEE Transactions on Nanotechnology |
Volume | 7 |
Issue number | 3 |
DOIs | |
State | Published - May 2008 |
Keywords
- GaAs/AlGaAs
- Molecular beam epitaxy (MBE)
- Nanofabrication
- Nanoimprint lithography
- Room temperature nanoimprint lithography (RTNIL)