Room-temperature luminescence from Si Ge single quantum well diodes grown by molecular beam epitaxy

H. Presting; T. Zinke; O. Brux; M. Gail; G. Abstreiter; H. Kibbel; M. Jaros

doi:10.1016/0022-0248(95)00367-3

Room-temperature luminescence from Si Ge single quantum well diodes grown by molecular beam epitaxy

H. Presting
, T. Zinke
, O. Brux
, M. Gail
, G. Abstreiter
, H. Kibbel
, M. Jaros

TUM Emeriti of Excellence

Daimler-Benz AG
Technische Universität Berlin
Technical University of Munich
University of Newcastle upon Tyne

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Room-temperature electroluminescence (EL) in the near infrared (λ ≈ 1.3 μm) has been observed from Ge/Si/Ge/Si_{1 - x}Ge_x quantum well (QW) diodes grown by molecular beam epitaxy (MBE). The QWs are grown on a p⁺-doped 〈100〉-Si substrates and consist of two thin Ge wells separated by a thicker Si middle layer. The whole structure is embedded in Si_0.85Ge_0.15 alloy layers situated on both sides. The structure was designed by pseudopotential calculations with a view to ensuring stability of the interband luminescence up to room temperature. The observed spectra are in good agreement with our theoretical predictions.

Original language	English
Pages (from-to)	15-20
Number of pages	6
Journal	Journal of Crystal Growth
Volume	157
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00367-3
State	Published - 2 Dec 1995

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title = "Room-temperature luminescence from Si Ge single quantum well diodes grown by molecular beam epitaxy",

abstract = "Room-temperature electroluminescence (EL) in the near infrared (λ ≈ 1.3 μm) has been observed from Ge/Si/Ge/Si1 - xGex quantum well (QW) diodes grown by molecular beam epitaxy (MBE). The QWs are grown on a p+-doped 〈100〉-Si substrates and consist of two thin Ge wells separated by a thicker Si middle layer. The whole structure is embedded in Si0.85Ge0.15 alloy layers situated on both sides. The structure was designed by pseudopotential calculations with a view to ensuring stability of the interband luminescence up to room temperature. The observed spectra are in good agreement with our theoretical predictions.",

author = "H. Presting and T. Zinke and O. Brux and M. Gail and G. Abstreiter and H. Kibbel and M. Jaros",

year = "1995",

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doi = "10.1016/0022-0248(95)00367-3",

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T1 - Room-temperature luminescence from Si Ge single quantum well diodes grown by molecular beam epitaxy

AU - Presting, H.

AU - Zinke, T.

AU - Brux, O.

AU - Gail, M.

AU - Abstreiter, G.

AU - Kibbel, H.

AU - Jaros, M.

PY - 1995/12/2

Y1 - 1995/12/2

N2 - Room-temperature electroluminescence (EL) in the near infrared (λ ≈ 1.3 μm) has been observed from Ge/Si/Ge/Si1 - xGex quantum well (QW) diodes grown by molecular beam epitaxy (MBE). The QWs are grown on a p+-doped 〈100〉-Si substrates and consist of two thin Ge wells separated by a thicker Si middle layer. The whole structure is embedded in Si0.85Ge0.15 alloy layers situated on both sides. The structure was designed by pseudopotential calculations with a view to ensuring stability of the interband luminescence up to room temperature. The observed spectra are in good agreement with our theoretical predictions.

AB - Room-temperature electroluminescence (EL) in the near infrared (λ ≈ 1.3 μm) has been observed from Ge/Si/Ge/Si1 - xGex quantum well (QW) diodes grown by molecular beam epitaxy (MBE). The QWs are grown on a p+-doped 〈100〉-Si substrates and consist of two thin Ge wells separated by a thicker Si middle layer. The whole structure is embedded in Si0.85Ge0.15 alloy layers situated on both sides. The structure was designed by pseudopotential calculations with a view to ensuring stability of the interband luminescence up to room temperature. The observed spectra are in good agreement with our theoretical predictions.

UR - https://www.scopus.com/pages/publications/0029633717

U2 - 10.1016/0022-0248(95)00367-3

DO - 10.1016/0022-0248(95)00367-3

M3 - Article

AN - SCOPUS:0029633717

SN - 0022-0248

VL - 157

SP - 15

EP - 20

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Room-temperature luminescence from Si Ge single quantum well diodes grown by molecular beam epitaxy

Abstract

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