Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE

M. Jaumann; J. Stimmer; P. Schittenhelm; J. F. Nützel; G. Abstreiter; E. Neufeld; B. Holländer; Ch Buchal

doi:10.1016/0169-4332(96)00095-5

Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE

M. Jaumann
, J. Stimmer
, P. Schittenhelm
, J. F. Nützel
, G. Abstreiter
, E. Neufeld
, B. Holländer
, Ch Buchal

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We investigated the room temperature electroluminescence of Er doped silicon diodes codoped with O or F as a function of dopant concentration and annealing conditions. Samples with Er concentrations of 5 × 10¹⁷ cm^-3 and 10¹⁸ cm^-3 show the most intense luminescence at λ = 1.54 μm. In case of F codoping the Er³⁺ peak intensity at 300 K is weak and there is a strong defect related peak at about the same wavelength.

Original language	English
Pages (from-to)	327-330
Number of pages	4
Journal	Applied Surface Science
Volume	102
DOIs	https://doi.org/10.1016/0169-4332(96)00095-5
State	Published - Aug 1996

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title = "Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE",

abstract = "We investigated the room temperature electroluminescence of Er doped silicon diodes codoped with O or F as a function of dopant concentration and annealing conditions. Samples with Er concentrations of 5 × 1017 cm-3 and 1018 cm-3 show the most intense luminescence at λ = 1.54 μm. In case of F codoping the Er3+ peak intensity at 300 K is weak and there is a strong defect related peak at about the same wavelength.",

author = "M. Jaumann and J. Stimmer and P. Schittenhelm and N{\"u}tzel, \{J. F.\} and G. Abstreiter and E. Neufeld and B. Holl{\"a}nder and Ch Buchal",

year = "1996",

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doi = "10.1016/0169-4332(96)00095-5",

language = "English",

volume = "102",

pages = "327--330",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

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T1 - Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE

AU - Jaumann, M.

AU - Stimmer, J.

AU - Schittenhelm, P.

AU - Nützel, J. F.

AU - Abstreiter, G.

AU - Neufeld, E.

AU - Holländer, B.

AU - Buchal, Ch

PY - 1996/8

Y1 - 1996/8

N2 - We investigated the room temperature electroluminescence of Er doped silicon diodes codoped with O or F as a function of dopant concentration and annealing conditions. Samples with Er concentrations of 5 × 1017 cm-3 and 1018 cm-3 show the most intense luminescence at λ = 1.54 μm. In case of F codoping the Er3+ peak intensity at 300 K is weak and there is a strong defect related peak at about the same wavelength.

AB - We investigated the room temperature electroluminescence of Er doped silicon diodes codoped with O or F as a function of dopant concentration and annealing conditions. Samples with Er concentrations of 5 × 1017 cm-3 and 1018 cm-3 show the most intense luminescence at λ = 1.54 μm. In case of F codoping the Er3+ peak intensity at 300 K is weak and there is a strong defect related peak at about the same wavelength.

UR - https://www.scopus.com/pages/publications/0030564844

U2 - 10.1016/0169-4332(96)00095-5

DO - 10.1016/0169-4332(96)00095-5

M3 - Article

AN - SCOPUS:0030564844

SN - 0169-4332

VL - 102

SP - 327

EP - 330

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE

Abstract

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